Magnetization, anomalous Hall effect, thermoelectric power, magnetoresistance, and resistivity of Sn_{1-x-y-z}Ge_{x}Mn_{y}Gd_{z}Te (x = 0.039÷0.597, y = 0.077÷0.125, z = 0.0014÷0.028) mixed crystals were studied over the temperature range 4.2-300 K. The ferromagnetic order with Curie temperature 18-24 K was revealed.
Magnetic susceptibility, Hall effect and resistivity of narrow-gap Ge_{1-x-y}Sn_xMn_yTe single crystals (x = 0.083÷0.115; y = 0.025÷0.124) were investigated in the temperature range 4.2-300 K revealing a ferromagnetic ordering at T_C ≈ 50 K. Temperature dependence of magnetization indicates a superparamagnetic phase with magnetic clusters arranging in a spin glass state below the freezing temperature T_f. Magnetic structure of InSe ⟨Mn⟩ 2D-ferromagnetic single crystals was studied by SQUID magnetometry, neutron diffraction, secondary ion mass spectroscopy, and wave dispersive spectra. Hysteresis loops of magnetization were observed at least up to 350 K. The cluster model of ferromagnetism is considered. The formation of self-assembled superlattice ferromagnetic InSe:Mn/antiferromagnetic MnSe during growth process and further annealing was established.
Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ= 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈10² at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.
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