The aim of this work is to study optical properties of self-organized Si nanohills formed on the SiO_2/Si interface after pulsed Nd:YAG laser irradiation. Nanohills on Si surface give strong photoluminescence in the visible range of spectrum, with a long wing in red portion. This property is explained by charge carrier quantum confinement in nanohills/nanowires.
We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.
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