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Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures

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Grigelionis I., Fobelets K., Vincent B., Mitard J., De Jaeger B., Simoen E., Hoffman T., Yavorskiy D., Łusakowski J.

Acta Physica Polonica A

2011

vol. 120

issue 5

933-935

We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization (V_{G}). Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to V_{G}. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic μ(V_{G}) dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.

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1 Acta Physica Polonica A

1 2011

1 De Jaeger B.

1 Fobelets K.

1 Grigelionis I.

1 Hoffman T.

1 Mitard J.

1 Simoen E.

1 Vincent B.

1 Yavorskiy D.

1 Łusakowski J.

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Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures