Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 1

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Publication available in full text mode
Content available

Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed

100%
Żymierska D., Godwod K., Adamczewska J., Auleytner J., Choiński J., Regiński K.
Acta Physica Polonica A
|
2002
|
vol. 101
|
issue 5
743-750
EN
The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10^{14} ions· cm^{-2} dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.