Search results

Sort By:

Limit search:

The Design Aspects for Ultra Low-Power, Low-Noise 90 nm CMOS Charge Sensitive Amplifier for the Active Pixel Detector

100%

Barzdenas V., Navickas R.

Acta Physica Polonica A

2009

vol. 115

issue 6

1139-1140

A falling particle in the digital registration systems for elementary particles active pixel detector induces electric charge, the value of which describes the parameters of the particle in the detector. Since the electric charge induced by a single particle is relatively weak, the detector signal is first processed (amplified and shaped) right in the zone of irradiation and only then transmitted further. This paper analyses the primary analogical registration electronics for digital registration systems for elementary particles active pixel detectors, which is charge sensitive amplifiers operating in the nanoampere region.

Electron Charge Noise Minimization in 130 nm CMOS Preamplifiers

100%

Barzdenas V., Navickas R.

Acta Physica Polonica A

2008

vol. 113

issue 3

825-828

In this paper we present the design aspects for low-power, low-noise CMOS charge sensitive preamplifier that uses a leakage current compensation circuit for use with radiation sensors. The preamplifier has unipolar response with the peaking time of about 45 ns and the gain about 115-145 mV/ke. Equivalent noise charge (ENC) is less than 80 e, when the input charge is 1-20 ke and the sensors capacitance is equal to 30 fF. In this work we present the quality function of the charge sensitive preamplifier, which characterizes best the optimal input transistor width W, with respect to equivalent noise charge and to the power consumptions.

Refine search results

2 Acta Physica Polonica A

1 2009

1 2008

2 Barzdenas V.

2 Navickas R.

Search results

The Design Aspects for Ultra Low-Power, Low-Noise 90 nm CMOS Charge Sensitive Amplifier for the Active Pixel Detector

Electron Charge Noise Minimization in 130 nm CMOS Preamplifiers