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Study of DI-Hydrogen-Monovacancy Defect in Silicon

100%
Stallinga P., Nielsen B. B.
Acta Physica Polonica A
|
1997
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vol. 92
|
issue 5
989-992
EN
A careful analysis of the alleged electron paramagnetic resonance spectrum of VH_{2} in silicon is made. The parameters of this spectrum coincide with those of the well-known excited state (S=1) spectrum of the oxygen vacancy defect. The conclusion is reached that they are one and the same.
2
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Electrical Characterization of Semiconducting Polymers

81%
Stallinga P., Gomes H., Jones G., Taylor D.
Acta Physica Polonica A
|
1998
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vol. 94
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issue 3
545-548
EN
Schottky diodes resulting from an intimate contact of aluminum on electrodeposited poly(3-methylthiopene) were studied by admittance spectroscopy, capacitance-voltage measurements and voltaic and optically-induced current and capacitance transients. The loss tangents show the existence of interface states that can be removed by vacuum annealing. Furthermore, the C-V curves contradict the idea of movement of the dopant ions.
3
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Electron Paramagnetic Resonance Study of Se-Doped AlSb: Evidence for Negative-U of the DX Center

71%
Stallinga P., Walukiewicz W., Weber E. R., Becla P., Lagowski J.
Acta Physica Polonica A
|
1995
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vol. 88
|
issue 5
1043-1047
EN
A metastable electron paramagnetic resonance signal is observed in Se doped AlSb. After illumination a strong, persistent electron paramagnetic resonance signal with an isotropic g-factor of 1.949 is observed. The absence of any electron paramagnetic resonance when cooled in the dark is direct evidence for the negative-U model. The electron paramagnetic resonance arises from the effective-mass state of the defect, which is not filled at thermal equilibrium. An analysis of the lineshape reveals that the linewidth is determined by hyperfine interactions. The extend of the wave function is found to be comparable to the prediction for the effective-mass state.
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