Search results

Sort By:

Limit search:

The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition

100%

Alevli M., Ozgit C., Donmez I.

Acta Physica Polonica A

2011

vol. 120

issue 6A

A-58-A-60

In this work, we explored the influence of the low growth temperatures on the structural and optical properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia (NH_3) plasma. Structural and optical results show that AlN films grown by self-limited plasma enhanced atomic layer deposition are polycrystalline at temperatures as low as 100C.

Self-Limiting Growth of GaN at Low Temperatures

100%

Ozgit C., Donmez I., Biyikli N.

Acta Physica Polonica A

2011

vol. 120

issue 6A

A-55-A-57

GaN thin films were deposited in a self-limiting fashion at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) or triethylgallium (TEG) as the group-III, and ammonia (NH_3) as the group-V precursors. TMG and TEG saturations were observed at 185 and 150°C, for doses starting from 0.015 and 1 s, respectively. Constant deposition rates of ≈ 0.51 and ≈ 0.48 Å/cycle were obtained within the temperature ranges of 250-350 and 150-350C for TMG- and TEG-based plasma-enhanced atomic layer deposition processes. Oxygen contents of the films were high ( ≈ 20 at.%) as determined by X-ray photoelectron spectroscopy.

Refine search results

2 Acta Physica Polonica A

2 2011

2 Donmez I.

2 Ozgit C.

1 Alevli M.

1 Biyikli N.

Search results

The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition

Self-Limiting Growth of GaN at Low Temperatures