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  1. 2 Acta Physica Polonica A

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  1. 1 2011

  2. 1 2010

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  1. 2 Alkhaled B.

  2. 2 Saloum S.

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Growth Rate and Sensing Properties οf Plasma Deposited Silicon Organic Thin Films from Hexamethyldisilazane Compound

100%
Saloum S., Alkhaled B.
Acta Physica Polonica A
|
2010
|
vol. 117
|
issue 3
484-489
EN
Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in N_{2}/HMDSN plasma. The plasma active species (electrons, ion flux rate, and UV radiation) contributing to the films growth mechanisms have been identified by electrical probes and optical emission spectroscopic analysis. The films have been investigated for their thickness and deposition rate, using quartz crystal microbalance, and sensing properties relating to humidity and gas (NH_{3}, CO_{2} and O_{2}) sorptive investigations, using the piezoelectric effect of quartz crystals of the quartz crystal microbalance. The effect of the different plasma conditions on the plasma phase characteristics and deposited thin films properties, as well as the correlations between deposition rate and plasma characteristics and between sorptive properties, water contact angles and thin films surface morphology are reported.
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Structural, Optical and Electrical Properties of Plasma Deposited Thin Films from Hexamethyldisilazane Compound

100%
Saloum S., Alkhaled B.
Acta Physica Polonica A
|
2011
|
vol. 119
|
issue 3
369-373
EN
Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in N_2/HMDSN plasma. The structural properties of the deposited films have been investigated by the Fourier transform infrared spectroscopy technique. Spectrophotometry measurements have been used to determine films optical constants (refractive index, dielectric constant and energy band gap); in addition, the photoluminescence from these films has been recorded. The electrical resistivity of films has been estimated from the measurements of current-voltage characteristics of deposited thin films. The effect of the different plasma conditions on these structural, optical and electrical properties of the prepared thin films, as well as the correlation between the different properties are reported.
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