Results found: 3

Number of results on page

Search results

Sort By:

Limit search:

Polymeric Track Etched Membranes - Application for Advanced Porous Structures Formation

100%

Sartowska B., Starosta W., Apel P., Orelovitch O., Blonskaya I.

Track etched membranes are porous systems consisting of a thin polymer foil with channels from surface to surface. Latent ion tracks are the result of the passage of swift ions through solid matter and they can be etched selectively. As a result, conical, cylindrical or other shape channels can be obtained. The increasing interest in the polymer track etched membranes with nanochannels is connected with development and creation of nanoporous materials of unique properties. The template synthesis method based on deposition of materials inside well-defined uniform pores of membranes offers unique possibilities of formation of one-dimensional, high aspect ratio (length to diameter) cylindrical species having form of rods, wires, tubules, multiwall tubules and multilayer rods, practically from any solid material. Metal-organic frameworks are a class of hybrid materials comprising metal ion-based vertices and organic ligands (linkers) which serve to connect the vertices into one-, two- or three-dimensional periodic structures. A specific property of porous structures is their intrinsic porosity, which renders them potentially useful for gas storage, separation and catalysis. The possibility of obtaining a new composite material: polymeric track etched membrane with pores filled with hybrid porous material has been demonstrated.

Anisotropic Magnetoresistance of Ni Nanorod Arrays in Porous SiO₂/Si Templates Manufactured by Swift Heavy Ion-Induced Modification

73%

Fedotova J., Ivanou D., Mazanik A., Svito I., Streltsov E., Saad A., Zukowski P., Fedotov A., Bury P., Apel P.

Acta Physica Polonica A

2015

vol. 128

issue 5

894-896

In this work anisotropic magnetoresistance in nanogranular Ni films and Ni nanorods on Si(100) wafer substrates was studied in wide ranges of temperature and magnetic field. To produce Ni films and nanorods we used electrochemical deposition of Ni clusters either directly on the Si substrate or into pores in SiO₂ layer on the Si substrate. To produce mesopores in SiO₂ layer, SiO₂/Si template was irradiated by a scanned beam of swift heavy 350 MeV ¹⁹⁷Au²⁶⁺ ions with a fluence of 5×10⁸ cm¯² and then chemically etched in diluted hydrofluoric acid. Pores, randomly distributed in the template have diameters of 100-250 nm and heights about 400-500 nm. Comparison of temperature dependences of resistance and magnetoresistance in Ni films and n-Si/SiO₂/Ni structures with Ni nanorods showed that they are strongly dependent on orientation of magnetic field and current vectors relative to each other and the plane of Si substrate. Moreover, magnetoresistance values in n-Si/SiO₂/Ni nanostructures can be controlled not only by electric field applied along Si substrate but also by additionally applied transversal bias voltage.

Magnetotransport in Si ⟨Sb⟩ Delta-Layer after Swift Heavy Ion-Induced Modification

73%

Fedotov A., Skuratov V., Yurasov D., Novikov A., Svito I., Apel P., Fedotov A., Zukowski P., Fedotova V.

Acta Physica Polonica A

2017

vol. 132

issue 2

229-232

In the present paper the investigations of the influence of swift heavy ion irradiation on the magnetotransport in the antimony (Sb) δ-layer in silicon are reported. Temperature and magnetic field dependences of the resistance R(T,B) and the Hall coefficient R_H(T,B) in the temperature range of 2K < T < 300K and B ≤ 8T before and after the 167 MeV Xe⁺²⁶ ion irradiation (ion fluence of 10⁸ cm¯²) were measured. At the temperatures below 50K there is observed the transition from the Arrhenius log R(1/T) to a logarithmic R ≈ -log(T) dependence both before and after the swift heavy ion exposure which confirms the assumption that the carrier transport goes through the δ-layer mainly. Moreover, the transition from the positive to negative magnetoresistance was observed with the temperature decrease that is characteristic of the two-dimensional quantum corrections to the conductivity in the case of weak localization regime. The appropriate Thouless lengths L_{Th}(T) ≈ A × T^{p} (where p and A are dependent on the scattering mechanism) indicated their ≈ 25-30% decrease after the swift heavy ion exposure. It was shown that the exponent p values were close to the theoretical one of p = 1, confirming the realization of 2D weak localization regime in the carrier transport.

Refine search results

3 Acta Physica Polonica A

1 2017

1 2015

1 2013

3 Apel P.

2 Fedotov A.

2 Svito I.

2 Zukowski P.

1 Blonskaya I.

1 Bury P.

1 Fedotova J.

1 Fedotova V.

1 Ivanou D.

1 Mazanik A.

1 Novikov A.

1 Orelovitch O.

1 Saad A.

1 Sartowska B.

1 Skuratov V.

1 Starosta W.

1 Streltsov E.

1 Yurasov D.

Search results

Polymeric Track Etched Membranes - Application for Advanced Porous Structures Formation

Anisotropic Magnetoresistance of Ni Nanorod Arrays in Porous SiO₂/Si Templates Manufactured by Swift Heavy Ion-Induced Modification

Magnetotransport in Si ⟨Sb⟩ Delta-Layer after Swift Heavy Ion-Induced Modification