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Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons

100%
Gaubas E., Kadys A., Uleckas A., Vaitkus J.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
829-832
EN
Variations of recombination lifetime, with fluence of the reactor neutrons from 10^{12} to 3×10^{16} n/cm^2, in the magnetic field applied Czochralski grown Si samples are examined by the contactless transient techniques of the microwave probed photoconductivity and dynamic gratings. A nearly linear decrease in lifetime from few microseconds to about 200 ps within the examined range of neutron irradiation fluences was obtained. This dependence persists under relatively low (≤80°C) temperature heat treatments. Also, cross-sectional scans of lifetime depth-profiles were examined, which show rather high homogeneity of lifetime values within wafer thickness.
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Photoluminescence and Photoconductivity Dynamics in Semi-Insulating Epitaxial GaN Layers

76%
Gaubas E., Juršėnas S., Kazlauskas K., Miasojedovas S., Vaitkus J., Žukauskas A.
Acta Physica Polonica A
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2005
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vol. 107
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issue 1
215-219
EN
The transients of fast free-carrier recombination and of multi-trapping processes due to different species of defects have been investigated by photoluminescence and by contact and microwave photoconductivity. Three distinct stages of relaxation, namely, of stimulated emission, of recombination due to point defects and capture into trapping centers associated with dislocations, and a non-exponential stage with a stretched-exponent asymptotic decay ascribed to dislocations mediated multi-trapping were distinguished by correlated examination of time-resolved photoluminescence and photoconductivity transients.
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