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35×4 Substates of DX Centers in AlGaAs:Si

100%

Ostermayer G., Brunthaler G., Stöger G., Jantsch W., Wilamowski Z.

Acta Physica Polonica A

1993

vol. 84

issue 4

765-768

The measured temperature dependent free carrier concentration in AlGaAs:Si samples is compared with a model calculation where we take the full 35 × 4 alloy statistics of the DX center and potential fluctuations into account. Within this statistics we are able to describe the electron capture by a single barrier E_{B} for all Al-configurations. We compare the alloy statistics with the simple 4 × 1 statistics.

Electron Localization in Sb-Doped Si/SiGe Superlattices

73%

Dietl T., Jaroszyński J., Sawicki M., Głód P., Wróbel J., Stöger G., Brunthaler G., Bauer G., Schäffler F.

Acta Physica Polonica A

1995

vol. 88

issue 4

699-702

Millikelvin studies of in-plane magnetoconductance in short period Si/Ge:Sb superlattices have been carried out in order to examine the effect of anisotropy on quantum localization. The field-induced metal-to-insulator transition has been observed, indicating the existence of extended states. This suggests that despite anisotropy as large as D_{∥}/D_{⊥} ≈ 10^{3} the system behaves as 3D in respect of localization by disorder.

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2 Acta Physica Polonica A

1 1995

1 1993

2 Brunthaler G.

2 Stöger G.

1 Bauer G.

1 Dietl T.

1 Głód P.

1 Jantsch W.

1 Jaroszyński J.

1 Ostermayer G.

1 Sawicki M.

1 Schäffler F.

1 Wilamowski Z.

1 Wróbel J.

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35×4 Substates of DX Centers in AlGaAs:Si

Electron Localization in Sb-Doped Si/SiGe Superlattices