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Nanostructure Formation during Amorphous Carbon Films Deposition

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Rutkuniene Z., Vigricaite L., Grigonis A.
Acta Physica Polonica A
|
2014
|
vol. 125
|
issue 6
1303-1306
EN
Influence of Cu particles for the carbon nanostructures formation during a-C:H films deposition by plasma enhanced chemical vapor deposition method from pure acetylene gas plasma were analyzed in this work. Silicon wafer and Cu target were simultaneously bombarded by Ar^{+} ions for the Cu particles deposition on the silicon before a-C:H films formation. It was obtained that hydrogenated silicon carbide forms on this defected Si/Cu surface during the first stage of carbon film deposition. Structure of a:C-H films and conditions of nanostructures formation depended on substrate temperature and Cu concentration in the film, then deposition time was 300 s.
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