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Optical Study of ZnTe-Based 2D and 0D Photonic Structures Containing CdTe/ZnTe Quantum Dots

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Jakubczyk T., Kazimierczuk T., Golnik A., Bienias P., Pacuski W., Kruse C., Hommel D., Kłopotowski Ł., Wojtowicz T., Gaj J.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
888-889
EN
We report on an optical study of ZnTe-based microcavity and micropillars. Angle-resolved reflectivity studies confirm a high quality of the investigated structure by setting the lower bound on the quality factor Q ≥ 1000, determined from normal-incidence reflection spectra. In a microphotoluminescence study, micropillar modes are observed at temperatures of the order of tens of kelvins. For structures grown by a complex growth procedure at two different MBE facilities, an enhancement of photoluminescence in the cavity mode is observed.
2
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Toward Better Light-Confinement in Micropillar Cavities

100%
Ściesiek M., Gietka K., Golnik A., Kossacki P., Jakubczyk T., Pacuski W., Kruse C., Hommel D.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
877-879
EN
We report on a two-step etching of ZnTe based micropillars. We demonstrate applicability of the technology and we analyze the optical properties of obtained structures. Microphotoluminescence spectra of individual micropillars show a typical mode pattern that confirms a successful growth of photonic structures. The reflectivity and photoluminescence spectra of a planar microcavity measured for various incident angles show that additional side distributed Bragg reflectors will be important for the further enhancement of photon confinement in micropillar cavity.
3
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Deep Levels Induced by CdTe/ZnTe Quantum Dots

100%
Zielony E., Placzek-Popko E., Roznicka A., Gumienny Z., Szatkowski J., Dyba P., Pacuski W., Kruse C., Hommel D., Guziewicz M.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
630-632
EN
The electrical properties of the CdTe/ZnTe quantum dot system have been analyzed to identify deep-level defects related with the presence of quantum dots. The capacitance-voltage (C-V) and deep level transient spectroscopy measurements were used to investigate the samples. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the n-type GaAs substrate. The quantum dots were formed by a Zn-induced reorganization of a thin CdTe layer. The presence of quantum dot formation was confirmed by micro-photoluminescence measurements. The deep level transient spectra for both samples are complex. In order to characterize individual contributions to the deep level transient spectra the latter have been simulated by separated Gaussian components [1]. The results of the deep level transient spectroscopy measurements yield the conclusion that the same defects are present in both materials but there is an increased concentration of the defects in the quantum dot structures. No deep level associated directly with the quantum dot confinement has been identified.
4
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Optical Properties of CdTe QDs Formed Using Zn Induced Reorganization

100%
Kobak J., Pacuski W., Jakubczyk T., Kazimierczuk T., Golnik A., Frank K., Rosenauer A., Kruse C., Hommel D., Gaj J.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
627-629
EN
In this paper we present optical studies of CdTe quantum dots formed using Zn-induced reorganization. The pattern of quantum dot photoluminescence lines is found to be similar to typical results reported for quantum dots grown with other techniques, although the positively charged exciton line is relatively more pronounced. Also the energy spacing between biexciton and exciton lines is found to be larger than in typical results. Zn-induced reorganization results in quantum dots density higher by an order of magnitude than in Te-induced quantum dots.
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