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Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells

100%

Mickevičius J., Tamulaitis G., Kuokštis E., Shur M., Yang J., Gaska R.

Acta Physica Polonica A

2008

vol. 114

issue 5

1247-1252

Dynamics of nonequilibrium carriers in high-Al-content AlGaN/AlGaN multiple quantum wells was studied. A set of multiple quantum wells with well widths varying from 1.65 to 5.0 nm was grown by metal-organic chemical vapor deposition. The structures were investigated by photoluminescence spectroscopy under quasi-steady-state conditions. The observed blueshift of the photoluminescence band peak was attributed to the screening of the built-in electric field. The integrated photoluminescence intensity dependence on excitation and temperature showed a strong influence of carrier localization.

Luminescence Decay Kinetics in GaN Studied by Frequency Domain Measurements

84%

Mickevičius J., Vitta P., Tamulaitis G., Žukauskas A., Shur M., Zhang J., Yang J., Gaska R.

Acta Physica Polonica A

2008

vol. 113

issue 3

833-837

Carrier dynamics in high-quality GaN epilayer was investigated at two extreme excitation levels. Carrier lifetime under high excitation conditions was estimated by using light-induced transient grating technique. Measurements at extremely low excitation power density were performed by using frequency-domain fluorescence lifetime technique. The study was performed in a wide temperature range from 8 to 300 K. The results revealed the influence of donor-acceptor pair recombination and carrier trapping processes.

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2 Acta Physica Polonica A

2 2008

2 Gaska R.

2 Mickevičius J.

2 Shur M.

2 Tamulaitis G.

2 Yang J.

1 Kuokštis E.

1 Vitta P.

1 Zhang J.

1 Žukauskas A.

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Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells

Luminescence Decay Kinetics in GaN Studied by Frequency Domain Measurements