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Bound Exciton Luminescence in Phosphorus Doped Cd_{1-x}Mn_{x}Te Crystals

100%
Van Khoi L., Gałązka R., Witkowska B., The Khoi N.
Acta Physica Polonica A
|
1998
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vol. 94
|
issue 3
392-396
EN
Measurement of photoluminescence as a function of temperature and of magnetic field in p-type phosphorus doped Cd_{1-x}Mn_{x}Te is reported. From the conduction band-acceptor level transition, the ionization energy of P-acceptors is obtained to be 54ą1 meV. The photoluminescence spectrum in the band edge region exhibits three maxima connected with the recombination of excitons bound to neutral acceptors (A^{0}, X), excitons bound to neutral donors (D^{0},X), and free excitons (X) at energies E_{(A^{0},X)}=1.606, E_{(D^{0},X)}=1.610, and E_{X}=1.614 eV, respectively. At T=1.4 K a strong increase in PL intensity of (A^{0}, X) line 8-fold as a function of magnetic field is found and shown to originate from the magnetic field-induced lowering of the acceptor binding energy and increase in the hole effective volume.
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Exciton Dynamics in ZnTe Based Semimagnetic Semiconductors and CdMnTe Quantum Wells

76%
The Khoi N., Gaj J., Karczewski G., Wojtowicz T., Kossut J., Demianiuk M.
Acta Physica Polonica A
|
1996
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vol. 90
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issue 5
899-902
EN
Inelastic scattering of excitons on LO phonons in ZnTe based bulk semimagnetic semiconductors with low concentration of paramagnetic ions (Mn^{2+}, Fe^{2+} and Cr^{2+}) was studied. A polarization degree of the LO phonon Raman lines was measured as a function of the exciton splitting in a magnetic field, and allowed us to determine the polarization lifetime (polariton flight time). A similar method was used to investigate multiple Mn^{2+} spin-flip scattering in CdMnTe quantum well. The cascade model seems to be not adequate to interpret the dependence of the polarization degree on the order of scattering.
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