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Atomic Layer Deposition of Magnetic Thin Films

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Mantovan R., Georgieva M., Perego M., Lu H., Cocco S., Zenkevich A., Scarel G., Fanciulli M.

Acta Physica Polonica A

2007

vol. 112

issue 6

1271-1280

We report on the research effort towards the development of processes for the realization of magnetic tunnel junctions by atomic layer deposition. Our strategy follows two main schemes. The first is a hybrid process where the ferromagnetic layers are produced by chemical vapour deposition and the tunnel oxide is deposited by atomic layer deposition. As ferromagnetic electrodes we use Co and Fe_3O_4, while MgO, Al_2O_3, and HfO_2 are employed as tunnel oxides. The second and most intriguing scheme is a full-oxide approach in which the ferromagnetic layers and the tunnel barrier layer are all oxides grown by atomic layer deposition. As ferromagnetic layers we focused on the growth of complex manganites (La_{0.7 Sr_{0.3 MnO_3) while as a tunnel oxide we propose La_2O_3. Film composition has been studied with time of flight secondary ion mass spectroscopy and Rutherford backscattering spectrometry. X-ray diffraction, X-ray reflectivity, and Fourier transform infrared spectroscopy have been used to investigate the structure and morphology of the layers. The magnetic properties of the films are measured by superconducting quantum interference device magnetometer.

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1 Acta Physica Polonica A

1 2007

1 Cocco S.

1 Fanciulli M.

1 Georgieva M.

1 Lu H.

1 Mantovan R.

1 Perego M.

1 Scarel G.

1 Zenkevich A.

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Atomic Layer Deposition of Magnetic Thin Films