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Mesoscopic Structures for Microwave-THz Detection

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Sužied.elis A., Ašmontas S., Požela J., Kundrotas J., Širmulis E., Gradauskas J., Kozič A., Kazlauskaité V., Anbinderis T.
Acta Physica Polonica A
|
2008
|
vol. 113
|
issue 3
803-809
EN
Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range.
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