Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 4

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Transport Properties of Disordered Graphene Layers

100%
Gryglas-Borysiewicz M., Jouault B., Tworzydło J., Lewińska S., Strupiński W., Baranowski J.
Acta Physica Polonica A
|
2009
|
vol. 116
|
issue 5
838-840
EN
Samples consisting of a few layers of graphene obtained by thermal decomposition of SiC were studied by means of transport experiments at 4 K and in a magnetic field up to 7 T. Transport data show that the samples have a two-dimensional character. Magnetoresistance has an approximately linear character at high magnetic fields, which has been previously observed in graphite samples, and a negative magnetoresistance, at low magnetic fields. The transverse resistivity ρ_{xy} is nonlinear as a function of B, which can be described using a many-carrier model.
2
Content available remote

Observation of Thermally-Activated Electron Traps in GaAs/AlAs/GaAs Heterostructures in Low-Frequency Noise Measurements

100%
Przybytek J., Stankiewicz R., Gryglas-Borysiewicz M., Baj M., Cavanna A., Faini G.
Acta Physica Polonica A
|
2011
|
vol. 119
|
issue 5
723-725
EN
During our investigations of tunneling process in thin 7 nm thick GaAs/AlAs/GaAs vertical single-barrier tunneling structure with Si δ-doping inside the barrier we have observed fluctuations of the tunneling current which exhibited large Lorentzian noise with intensity depending on biasing voltage. We have shown that Lorentzian noise originates from multilevel random telegraph noise of the small number of fluctuators which influence the tunneling process. Time-domain analysis of the current noise measured for temperatures between 4.2 K and 50 K enabled to determine the thermal activation energies of these fluctuators lying between 0.8 and 3 meV.
3
Content available remote

Influence of Epitaxial Strain on Magnetic Anisotropy in (Ga,Mn)As

100%
Juszyński P., Wasik D., Gryglas-Borysiewicz M., Przybytek J., Szczytko J., Twardowski A., Sadowski J.
Acta Physica Polonica A
|
2012
|
vol. 122
|
issue 6
1004-1006
EN
Two (Ga,Mn)As samples having different magnetic anisotropy (one with in-plane easy axis and another one with out-of-plane easy axis) were studied by means of magnetotransport experiments. Anisotropy field B_{A} was determined for both samples as a function of temperature. For the sample having in-plane easy axis, an inversion of the direction of planar Hall effect hysteresis was observed upon increase of temperature. This result was simulated using the Stoner-Wohlfarth model.
4
Content available remote

Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions

100%
Lewińska S., Gryglas-Borysiewicz M., Przybytek J., Baj M., Jouault B., Gennser U., Ouerghi A.
Acta Physica Polonica A
|
2011
|
vol. 119
|
issue 5
606-608
EN
Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.