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Influence of Growth Conditions and Doping on Physical Properties of Gallium Antimonide Single Crystals

100%
Mirowska A., Orłowski W.
Acta Physica Polonica A
|
2012
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vol. 122
|
issue 6
1111-1114
EN
Gallium antimonide (GaSb) single crystals were grown by modified Czochralski method integrated with in situ synthesis in a flowing atmosphere of pure hydrogen. The influence of charge material purity as well as other technological parameters on GaSb crystals quality was investigated. High purity undoped GaSb single crystals were grown with residual acceptors concentration < 1.4 × 10^{17} cm^{-3} and high mobility ≈ 690 cm^2/Vs (at 300 K). P-type GaSb crystals were doped with silicon (carrier concentration up to 2 × 10^{19} cm^{-3}) and with zinc (up to 1 × 10^{19} cm^{-3}). Tellurium doped n-type GaSb single crystals were obtained with concentration up to 2 × 10^{18} cm^{-3}. Electrical parameters were investigated by the Hall measurements (300 K and 77 K). Temperature dependent Hall measurements (10 ÷ 300 K) were used to compare the quality of undoped GaSb (obtained from Sb of different purity). Dopant concentration was estimated by glow discharge mass spectroscopy analysis. Axial and radial distribution of carrier concentration were investigated especially for Te-doped crystals (low segregation coefficient of Te in GaSb). Great contribution of compensation and self-compensation mechanisms is shown especially for the beginning part of grown crystals and for low Te-doping level. Radial distribution of physical properties for crystals grown in 〈100〉 direction is not axisymmetrical especially for doped GaSb crystals.
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Impact of Different Conditions of Technological Process on Thermoelectric Properties of Fine-Grained PbTe

81%
Królicka A., Materna A., Piersa M., Mirowska A.
Acta Physica Polonica A
|
2016
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vol. 130
|
issue 5
1255-1258
EN
The aim of this work was to obtain PbTe material in the desired way in order to control the combined impact of lattice disorder, nanoscale precipitates and reduced grain sizes on the thermoelectric properties of this material. To achieve this, PbTe ingot doped with Ag was obtained by the Bridgman method, followed by ball-milling, cold pressing and sintering. In order to estimate crystallites diameters grain size measurements were carried out using the optical microscopy. Studies of electrical and thermoelectric properties of fine-grained material were performed. In order to analyze the morphology and the composition scanning electron microscopy and energy-dispersive X-ray spectroscopy were performed. Energy-dispersive X-ray spectroscopy analysis also revealed presence of Ag-Te precipitates.
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