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Thin Film Crystallinity and Substrate Materials in Atomic Graphoepitaxy of YBa_{2}Cu_{3}O_{x}

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Miyazawa S., Mukaida M., Sasaura M.

Acta Physica Polonica A

1997

vol. 92

issue 1

85-96

The complexity of a-/c-axis oriented growth of YBa_{2}Cu_{3}O_{x} thin films is reviewed from the viewpoint of controlling a-axis preferred thin film growth. Perfectly c-axis in-plane-aligned a-axis oriented YBa_{2}Cu_{3}O_{x} thin films, or "pure" a-axis oriented films, can be grown on the (100) face of tetragonal K_{2}NiF_{4}-type substrates by template growth process. A new growth mechanism called atomic graphoepitaxy is presented as a growth model. Transmission electron microscopy reveals that the films on a (100) SrLaGaO_{4} substrate consist of domains surrounded by anti-phase and stackingfault boundaries. This domain formation can be well explained by substrate surface irregularities inherent in the SrLaGaO_{4} crystal. The formation of defects in microstructures in "pure" a-axis oriented YBa_{2}Cu_{3}O_{x} thin films is also modeled based on our atomic graphoepitaxial growth model.

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1 Acta Physica Polonica A

1 1997

1 Miyazawa S.

1 Mukaida M.

1 Sasaura M.

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Thin Film Crystallinity and Substrate Materials in Atomic Graphoepitaxy of YBa_{2}Cu_{3}O_{x}