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Luminescence Decay in Deep Quantum Wells CdTe/Cd_{0.5}Mn_{0.5}Te at Room Temperature

100%

Kowalczyk L., Fancey S., Buller G. S., Massa J. S., Kutrowski M., Janik E., Karczewski G., Wojtowicz T., Zakrzewski A. K., Kossut J.

Acta Physica Polonica A

1995

vol. 87

issue 2

508-513

Time-resolved photoluminescence was used to study exciton recombination in deep CdTe/Cd_{0.5}Mn_{0.5}Te single quantum well. The width of the investigated well was 100 A. The study was performed at room temperature. The lifetime of the exciton determined in this work has a value comparable to that observed in shallow CdTe/Cd_{0.85}Mn_{0.15}Te quantum wells. A strong enhancement of the photoluminescence decay time with increasing intensity of the exciting laser beam is observed which is indicative of saturation of the non-radiative recombination centers.

Temperature Study of Photoluminescence from Deep CdTe/Cd_{1-x}Mn_{x}Te Quantum Wells

100%

Kutrowski M., Wojtowicz T., Karczewski G., Kopalko K., Zakrzewski A. K., Janik E., Grasza K., Łusakowska E., Kossut J.

Acta Physica Polonica A

1995

vol. 87

issue 2

500-504

The photoluminescence studies in CdTe/CdMnTe quantum wells are reported in the temperature range 10-300 K. The MnTe concentration in the barriers is x = 0.3, 0.5, 0.63 and 0.68. Thus the potential wells in our samples are very deep, of the order of ≈ 800 meV in the conduction band and ≈ 200 meV in the valence band in the case of the x = 0.68 sample. In spite of the large lattice mismatch (related to high x value) between the wells and the barriers the observed line widths are as narrow as 2 meV in the case of 100 Å. Clear manifestations of internal strain are observed. In particular, the temperature coefficient of the luminescence energies shows strong dependence on the width of wells.

Electrical and Structural Properties of Ohmic Contacts to n-Type and High Resistivity CdTe

81%

Kamińska E., Piotrowska A., Guziewicz M., Gierlotka S., Papis E., Łusakowski J., Szadkowski K., Kwiatkowski S., Dietl T., Grabecki G., Jaroszyński J., Karczewski G., Zakrzewski A. K.

Acta Physica Polonica A

1995

vol. 87

issue 2

411-414

The interaction between CdTe and In during the formation of an ohmic contact has been investigated. Emphasis is placed on the study of the effect of thermally induced sublimation of cadmium on electrical properties of contacts. Presented results prove the effectiveness of cap annealing and rapid thermal processing in fabrication of improved ohmic contacts with limited Cd losses during the contacting procedure.

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3 Acta Physica Polonica A

3 1995

3 Karczewski G.

3 Zakrzewski A. K.

2 Janik E.

2 Kossut J.

2 Kutrowski M.

2 Wojtowicz T.

1 Buller G. S.

1 Dietl T.

1 Fancey S.

1 Gierlotka S.

1 Grabecki G.

1 Grasza K.

1 Guziewicz M.

1 Jaroszyński J.

1 Kamińska E.

1 Kopalko K.

1 Kowalczyk L.

1 Kwiatkowski S.

1 Massa J. S.

1 Papis E.

1 Piotrowska A.

1 Szadkowski K.

1 Łusakowska E.

1 Łusakowski J.

Search results

Luminescence Decay in Deep Quantum Wells CdTe/Cd_{0.5}Mn_{0.5}Te at Room Temperature

Temperature Study of Photoluminescence from Deep CdTe/Cd_{1-x}Mn_{x}Te Quantum Wells

Electrical and Structural Properties of Ohmic Contacts to n-Type and High Resistivity CdTe