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Effect of Oxygen Redistribution on Temperature Dependence of Pseudo-Gap in Underdoped HoBa_{2}Cu_{3}O_{7-δ} Single Crystals

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Vovk R., Nazyrov Z., Obolenskii M., Pinto Simoes V., Januszczyk M., Latosińska J.
Acta Physica Polonica A
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2011
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vol. 120
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issue 3
512-515
EN
The effect of annealing at room temperature on the excess conductivity of oxygen deficient HoBa_2Cu_{3}O_{7 - δ} single crystal is studied. It is shown that there is substantial extension of the interval of linear dependence ρ_{ab} (T) and narrowing of the temperature area of the pseudo-gap regime as a result of annealing. The excess conductivity satisfies the exponential temperature dependence in a wide temperature interval. The temperature dependence of the pseudogap is satisfactorily described by the BCS-BEC theoretical model.
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Compression Changes in Electrical Resistance and Critical Temperature of Nb_{1-x}Se_2Sn_x Single Crystals

100%
Obolenskiy M., Zavgorodniy A., Vovk R., Nazyrov Z., Goulatis I., Januszczyk M., Latosińska J.
Acta Physica Polonica A
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2012
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vol. 122
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issue 1
159-161
EN
In this work we investigate the influence of hydrostatic pressure (up to 12 kbar) on the critical parameters of Nb_{1-x}Se_2Sn_x (x=0.1 and x=0.15) single crystals. It is shown that a change in the density of states at the Fermi level brings the main contribution to the increase in T_{c} under pressure. Under the effect of hydrostatic pressure, the phonon spectrum is shifted to higher frequencies (narrowed). The estimated Debye temperature is consistent with those obtained from the heat capacity measurements in NbSe_2 single crystals. It is shown that upon increasing hydrostatic pressure the mean free path increases and Nb_{1-x}Se_2Sn_x should be considered as the pure limit in the Ginzburg-Landau theory.
3
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Vacancy-Fluorine Clusters in Silicon

100%
Chroneos A., Vovk R., Goulatis I., Nazyrov Z., Pinto Simoes V., Januszczyk M., Latosińska J.
Acta Physica Polonica A
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2011
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vol. 119
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issue 6
774-777
EN
Fluorine (F) doping and the formation of F-vacancy (F_{n}V_{m}) clusters have been extensively studied in silicon (Si) as they can suppress the transient self-interstitial mediated diffusion of boron (B). Recent experimental studies by Bernardi et al. revealed that there is no significant concentration of F_{n}V_{m} clusters (for n ≥ 4, m ≥ 1) in disagreement with a number of density functional theory studies. In the present study we use electronic structure calculations to evaluate the binding energies of F_{n}V_{m} clusters and V_{n} clusters. The significant binding energies of the V _{n} clusters reveals that the concentration of the large F_{n}V_{m} clusters (n ≥4, m ≥1) will be limited compared to the V_{n} clusters or even smaller clusters.
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