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EN
A brief description of the basis principles of determination Young's indentation modulus and hardness by using of nanoindentation technique are given. The detailed indentation technique and characteristic features of polymer at room temperature are also discussed.
EN
The results of the scanning tunneling microscopy and spectroscopy as well as atomic force microscopy measurements on the Nd_{2-x}Ce_{x}CuO_{4-y} single crystals in ambient conditions are reported. Using the scanning tunneling microscopy we were able to modify the Nd_{2-x}Ce_{x}CuO_{4-y} ab-plane in air under the conditions of sample bias voltage V_{t}=500 mV and set current I_{s}=0.3 nA. It is possible to prepare atomically flat and clean surfaces as well as to create new structures in a nanometer scale in these electron-doped materials. The similar processes were not observed during atomic force microscopy imaging.
EN
In this paper the experimental investigations of the YBa_2Cu_3O_{7-δ} single crystal, using atomic force microscopy and magnetic force microscopy, are presented. The atomic force microscopy was used to identify oxidized and unoxidized YBa_2Cu_3O_{7-δ} crystal. The YBa_2Cu_3O_{7-δ} single oxidized crystal was examined for magnetic properties by means of magnetic force microscopy. The research was carried out at a room temperature and in the air atmosphere without external magnetic field.
4
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Point Contact Studies of High T_{c} Superconductors

81%
EN
Point contact spectroscopy experiments were performed on both single crystals Bi_{2}Sr_{2}CaCu_{2}O_{8+y} and BiSrCaCuO/Ag sintered material using gold tips. The spectra exhibit tunneling structure, which are interpreted in terms of the energy gap structure 2Δ = 58 meV at 4.2 K. We observed the strong Andreev reflection of the Au-BiSrCaCuO/Ag boundary.
EN
Scanning tunneling microscopy/spectroscopy as well as atomic force microscopy were applied to study the non-structural and nanoelectronic properties of periodic nickel nanoparticles deposited on n-silicon substrates. Periodic nickel (Ni) nanoparticles were prepared by using nanosphere lithography and analyzed by scanning tunneling microscopy/spectroscopy and atomic force microscopy. By the evaporation of Ni perfectly ordered nanoparticles were produced and very good correlation between latex mask was observed. Finally, tunneling spectroscopy performed with non-magnetic tip yield information about local electronic properties of nanoscale structures at surface.
EN
In this paper we present experimental investigations of carbon nanotubes deposited on highly orientated pyrolytical graphite using scanning tunneling microscopy and scanning tunneling spectroscopy. The aforementioned methods apart from detailed topographic data provided us with information about local density of state. We also show the I-V and dI/dV characteristics, which display the metallic and semiconducting characters of investigated carbon nanotubes. All measurements were taken in the air and at room temperature.
EN
We demonstrate experimentally that conductance steps can occur in nanowires formed at metal-semiconductor junctions, between a cobalt tip and a germanium surface revealing long-duration plateaus at reproducible levels. The high reproducibility of the conductance traces obtained leads to very sharp peaks in the conductance histogram suggesting formation of stable atomic configurations. We develop a new type of correlation analysis of the preferred conductance values that provide new type of information on a few-atomic-nanocontact formation dynamics.
EN
Conductance quantization of heterocontacts between tungsten (W) tip and cubic RCu_5 (R = Gd, Ho, Lu) binary compounds prepared by melt-spinning was observed in nanowires produced dynamically using piezoelectric actuator. The conductance stepwise behaviour of the nanowires was directly observed with a storage oscilloscope. Quantum units of the nanowires conductance measured in their paramagnetic states are presented and discussed in terms of the Landauer formalism.
9
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In Situ Conductance of Fe/Si and Fe/Ge Multilayers

71%
EN
In this paper we study Fe/Si and Fe/Ge multilayers prepared at room temperature by magnetron sputtering. In situ conductance measurements reveal the formation of interfacial Fe-Si and Fe-Ge mixtures. During the Fe deposition a modification of growth mode is noticed. Deposition of Si (or Ge) onto Fe leads to the reduction of the Fe layer thickness due to interdiffusion, and Fe-Si (or Fe-Ge) structures appear. Above about 1.3 nm of deposited Si (1.5 nm of Ge) nominally pure Si (Ge) starts growing. Surface topography of the Fe/Si multilayers is studied by atomic force microscopy.
EN
Electrical and luminescent properties of ZnS:Mn,Cu,Cl thin films were investigated. Combined both studies: scanning tunneling microscopy and scanning tunneling spectroscopy were made. The current and differential conductance versus applied voltage were measured for the ZnS:Mn,Cu,Cl thin films. Additionally, the spectral and kinetic properties of the electroluminescent cells based on the ZnS:Mn,Cu,Cl thin films were measured. The maximum of the electroluminescence lies at 586 nm. The electroluminescence was excited by rectangular wave voltage pulses with pulse length from 1μs to 1 ms. It was shown that time dependence of the electroluminescence is well explained assuming energy transfer between monomolecular centres.
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