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Effect of Annealing and Irradiation on the Optical Properties of Oxide Crystals

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Kaczmarek S., Berkowski M., Moroz Z., Warchoł S.

Acta Physica Polonica A

1999

vol. 96

issue 3-4

417-427

We described results of the effect of annealing and irradiation treatments on the optical properties of Y_{3}Al_{5}O_{12}, YAlO_{3}, SrLaGa_{3}O_{7}, LiNbO_{3}, Gd_{3}Ga_{5}O_{12}, LaGaO_{3}, ZnSe, and LiF single crystals. Changes in absorption and luminescence are presented. Recharging processes of uncontrolled impurities (e.g. Fe^{3+}, Fe^{2+}, and Mn^{2+}), and active ions (e.g. Nd^{3+}, Dy^{3+}, Cr^{4+}, Cr^{3+}, and Ce^{3+}), as well as types of color centers produced in the crystals after a particular irradiation or annealing treatment are presented.

Damage Production in As Implanted GaAs_{1-x}P_{x}

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Krynicki J., Warchoł S., Rzewuski H., Groetzschel R.

Acta Physica Polonica A

1995

vol. 87

issue 1

249-252

Post-implantation damage in GaAs_{1-x}P_{x} compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 10^{13} -8 × 10^{13} cm^{-2} at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscattering 1.7 MeV He^{+} channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures.

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2 Acta Physica Polonica A

1 1999

1 1995

2 Warchoł S.

1 Berkowski M.

1 Groetzschel R.

1 Kaczmarek S.

1 Krynicki J.

1 Moroz Z.

1 Rzewuski H.

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Effect of Annealing and Irradiation on the Optical Properties of Oxide Crystals

Damage Production in As Implanted GaAs_{1-x}P_{x}