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Capacitance Spectroscopy of Single-Barrier GaAs/AlAs/GaAS Structures Containing InAs Quantum Dots

100%

Belyaev A., Eaves L., Main P., Polimeni A., Stoddart S., Henini M.

Acta Physica Polonica A

1998

vol. 94

issue 2

245-249

An electrostatic profile of single-barrier heterostructures with InAs quantum dots encased into barrier has been studied. The role of growth conditions and structure's design is investigated. The charging state and position of energy levels for InAs quantum dots embedded in AlAs matrix are discussed.

Quantum States of Self-Assembled InAs Dots Probed by Magneto-Tunneling Spectroscopy

84%

Patanè A., Eaves L., Main P., Levin A., Zambrano M., Henini M., Vdovin E., Dubrovskii Y., Hill G.

Acta Physica Polonica A

2001

vol. 100

issue 2

165-173

We present an experimental study of the electron wave function in InAs/GaAs self-assembled quantum dots. Magneto-tunneling spectroscopy is employed as a non-invasive probe to produce two-dimensional images of the probability density of an electron confined in a quantum dot. The images reveal the elliptical symmetry of the ground state and the characteristic lobes of the higher energy states of the dots.

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2 Acta Physica Polonica A

1 2001

1 1998

2 Eaves L.

2 Henini M.

2 Main P.

1 Belyaev A.

1 Dubrovskii Y.

1 Hill G.

1 Levin A.

1 Patanè A.

1 Polimeni A.

1 Stoddart S.

1 Vdovin E.

1 Zambrano M.

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Capacitance Spectroscopy of Single-Barrier GaAs/AlAs/GaAS Structures Containing InAs Quantum Dots

Quantum States of Self-Assembled InAs Dots Probed by Magneto-Tunneling Spectroscopy