Transport properties of 10μm to 30μm wide grain-boundary junctions ion-etched in thin colossal magnetoresistance La_{0. 7}Sr_{0.3}MnO_3 films deposited on a SrTiO_3 bi-crystal were investigated. We have measured the current-voltage characteristics in the temperature range from 4.2 K to 300 K without applied magnetic field, as well as the magnetoresistance at magnetic fields up to±10 kOe directed parallel to the film surface, both perpendicular and parallel to the direction of current flow through the junctions. The investigated junctions have nonlinear current-voltage characteristics in this temperature range and consist of several magnetic domains. The maximum magnetoresistance (R(H)-R _{max})/R_{max}, measured at 1 kOe was -17.6% at 4.1 K.
Grain boundaries play an important role in low-field magnetoresistance of La_{0.7}Ca_{0.3}MnO_{3} and La_{0.7}Sr_{0.3}MnO_{3} thin films deposited by magnetron sputtering and pulsed laser deposition on YSZ(100) and silicon substrates buffered by YSZ. Well-pronounced low-field magnetoresistance hysteresis was observed in magnetic fields applied in in-plane and out-of-plane directions. High values of local magnetoresistance sensitivity d(MR)/dH in the vicinity of the coercive field were obtained reaching up to 0.2%/Oe for La_{0.7}Ca_{0.3}MnO_{3} samples at 5 K.
For the first time, thin films of NdBaCo_{2}O_{5+x} were deposited by RF magnetron sputtering on different substrates. The films deposited on SrLaAlO_4(001) substrates exhibited highly textured structure with c-axis directed out-of-plane. Magnetic measurements M vs. T of three NdBaCo_{2}O_{5+x}/SrLaAlO_4(001) films revealed successively paramagnetic-ferromagnetic-antiferromagnetic transitions with decrease in temperature. Their paramagnetic Curie-Weiss temperatures were estimated to be in the range of T_{C}=100-116 K. Resistivity of the cobaltite thin film exhibited insulating behavior and the best fit was found for the variable range hopping mechanism.
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