Search results

Sort By:

Limit search:

Energy and Optical Absorption Spectra of Multiply Charged Anisotropic Quantum Boxes

100%

Trojnar A., Małachowski T., Wójs A.

Acta Physica Polonica A

2007

vol. 112

issue 2

173-176

Using a simple model of a two-dimensional rectangular quantum box we study the effects of size and anisotropy on the energy and photoluminescence spectra of neutral and charged quantum dots. The competition of symmetries and energy/length scales of the free exciton or trion and of the confining potential is analyzed. The numerical calculations consisted of the diagonalization of the few-electron-hole Hamiltonian matrices in the full configuration-interaction basis, with the simultaneous resolution of the conserved orbital and spin quantum numbers.

Electronic Properties of Thin HfO_2 Films Fabricated by Atomic Layer Deposition on 4H-SiC

64%

Taube A., Gierałtowska S., Gutt T., Małachowski T., Pasternak I., Wojciechowski T., Rzodkiewicz W., Sawicki M., Piotrowska A.

Acta Physica Polonica A

2011

vol. 119

issue 5

696-698

Applicability of thin HfO_2 films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10^{12} eV^{-1} cm^{-2}) on HfO_2/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.

Refine search results

2 Acta Physica Polonica A

1 2011

1 2007

2 Małachowski T.

1 Gierałtowska S.

1 Gutt T.

1 Pasternak I.

1 Piotrowska A.

1 Rzodkiewicz W.

1 Sawicki M.

1 Taube A.

1 Trojnar A.

1 Wojciechowski T.

1 Wójs A.

Search results

Energy and Optical Absorption Spectra of Multiply Charged Anisotropic Quantum Boxes

Electronic Properties of Thin HfO_2 Films Fabricated by Atomic Layer Deposition on 4H-SiC