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Infrared Optical and X-Ray Determination of Parameters for MOVPE Grown InAs_{1-x}Sb_{x} Epilayers

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Marszałek B., Zielińska-Rohozińska E., Bożek R., Stępniewski R., Witowski A.
Acta Physica Polonica A
|
1997
|
vol. 92
|
issue 5
919-922
EN
The experimental room-temperature transmission of metalorganic vapour phase epitaxy grown InAsSb epilayers is compared with calculations based on a Kane model of the band structure. The band structure parameters are found. The composition of the samples was determined by X-ray diffraction.
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