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Photoelectron Spectroscopy of II-VI Semiconductor Heterostructures

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Wörz M., Hampel M., Flierl R., Gebhardt W.
Acta Physica Polonica A
|
1996
|
vol. 90
|
issue 5
1113-1117
EN
We are growing ZnSe, ZnS and CdSe layers epitaxially on GaAs(001) substrates by atomic layer epitaxy and molecular beam epitaxy. The substrates are prepared by a H-plasma method in order to obtain a sharp interface between substrate and layer. The quality of our samples is controlled by reflection high energy diffraction and X-ray diffraction. Furthermore, the samples are characterized in situ by photoelectron spectroscopy. We observe resonant Zn 3d^{8} and Cd 4d^{8} satellites, which are used to check the layer quality. As a result, the valence band offsets of CdSe/ZnSe and ZnSe/CdSe were obtained. The values are ΔE_{v}(ZnSe/CdSe) = -(0.13 ± 0.07) eV and ΔE_{v}(CdSe/ZnSe) = -(0.13 ± 0.07) eV, which confirm the commutativity rule.
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