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Temperature and Composition Dependence of Photovoltaic Spectra of Pb_{1-x}Mn_{x}Se Diodes

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Le-Van-Khoi, Szczerbakow A., Karczewski G., Gałązka R. R.
Acta Physica Polonica A
|
1991
|
vol. 79
|
issue 2-3
287-290
EN
Photovoltaic spectra of Pb_{1-x}Mn_{x}Se homojunctions have been measured in the infrared spectral region within the temperature range 15-300 K. The junctions have been formed by cadmium diffusion into the p-type Pb_{1-x}Mn_{x}Se crystals with manganese content 0 ≤ x ≤ 0.08. From the positions of the photovoltaic maxima the energy band gap of the diode material has been determined. A phenomenological expression describing the energy band gap of Pb_{1-x}Mn_{x}Se as a function of temperature and crystal composition has been proposed. In diodes containing high manganese content x = 0.06 and x = 0.08 a second photovoltaic maximum caused by indirect optical transitions between the main conduction band and the secondary valence band located along the ∑-axis of the Brillouin zone has been observed.
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