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Formation and characterization of CuxS layers on polyethylene film using the solutions of sulfur in carbon disulfide

100%
Ancutienė I., Janickis V.
Open Chemistry
|
2010
|
vol. 8
|
issue 6
1281-1287
EN
Results of the formation of copper sulfide layers using the solutions of elemental sulfur in carbon disulfide as precursor for sulfurization are presented. Low density polyethylene film can be effectively sulfurized in the solutions of rhombic (α) sulfur in carbon disulfide. The concentration of sulfur in polyethylene increases with the increase of the temperature and concentration of sulfur solution in carbon disulfide and it little depends on the duration of sulfurization. Electrically conductive copper sulfide layers on polyethylene film were formed when sulfurized polyethylene was treated with the solution of copper (II/I) salts. CuxS layer with the lowest sheet resistance (11.2 Ω cm−2) was formed when sulfurized polyethylene was treated with copper salts solution at 80°C. All samples with formed CuxS layers were characterized by X-ray photoelectron spectroscopy. XPS analysis of obtained layers showed that on the layer’s surface and in the etched surface various compounds of copper, sulfur and oxygen are present: Cu2S, CuS, CuO, S8, CuSO4, Cu(OH)2 and water. The biggest amounts of CuSO4 and Cu(OH)2 are present on the layer’s surface. Significantly more copper sulfides are found in the etched layers.
2
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Formation and study of mixed copper sulfide-copper telluride layers on the surface of polyamide 6

100%
Janickis V., Žalenkienė S.
Open Chemistry
|
2010
|
vol. 8
|
issue 4
709-724
EN
The layers of mixed copper chalcogenides, CuxS-CuyTe, were formed on the surface of polyamide using solutions of potassium and sodium telluropentathionates, K2TeS4O6 and Na2TeS4O6, respectively, and of telluropentathionic acid, H2TeS4O6, as precursors of chalcogens. The concentration of sorbed chalcogens increased with the increasing time of the treatment, concentration and temperature of precursor solution. CuxS-CuyTe layers are formed on the surface of polyamide after the treatment of chalcogenized polymer with Cu(II/I) salt solution. The concentration of copper in the layer increases with the increase of chalcogenization duration, concentration and the temperature of chalcogenization solution. In the surface of CuxS-CuyTe layers various copper, sulfur, tellurium and oxygen compounds (Cu2S, CuS, S8, CuxS, CuyTe, Cu(OH)2 and TeO2) were present. Chalcogenides were the major components in the layer. Chalcogenide phases - digenite, Cu1.8S, djurleite, Cu1.9375S, anilite, Cu7S4, geerite, CuS2, chalcocite, Cu2S, tetragonal Cu3.18Te2, Cu2.72Te, hexagonal Cu2Te, Cu4Te3, Cu1.80Te, Cu1.85Te2, and orthorhombic vulcanite, CuTe were identified in the layers by X-ray diffraction. Electrical sheet resistance of CuxS-CuyTe layers vary from ∼ 1.0 kW cm−2 to 4×103 kΩ cm−2. It is concluded that the formation of chalcogenide layers proceeds in the form of islands which grow into larger agglomerates. Use of the gathered data enables design and formation of the CuxS-CuyTe layers with desired conductivities. [...]
3
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The influence of process conditions on the formation of thallium sulfide layers on polyethylene by the use of higher polythionic acid H2S33O6

100%
Bružaitė I., Janickis V.
Open Chemistry
|
2013
|
vol. 11
|
issue 4
629-635
EN
Thallium sulfide layers of varying composition form on the surface of low-density polyethylene (PE) when the PE films have been sulfurized in a solution of higher polythionic acid H2S33O6, and then immersed in the alkaline solution of thallium (I) sulfate. The concentration of sulfur sorbed-diffused into PE surface increases with the increase of the sulfurization time and concentration of higher polythionic acid solution. The concentration of thallium in the Tlx Sy layers depends on the sulfur concentration sorbed-diffused into PE, the concentration, and temperature of thallium (I) sulfate solutions. By chemical analysis of the obtained sulfide layers it was determined that the values of x and y in the TlxSy layers varies in the intervals: 1xy2S2 were identified by X-ray diffraction analysis in thallium sulfide layers. Scanning Electron (SEM) and Atomic Force (AFM) microscopies were used to characterize surface morphology of thallium sulfide layers. The films deposited on the PE surface have a non-homogeneous structure, and consist of separated islands. [...]
4
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Comparison of the efficacy of sulfurization agents in decreasing the sheet resistance of polyamide and polyethylene with copper sulfide layers and influence of their compositions

81%
Ivanauskas R., Ancutienė I., Janickis V., Stokienė R.
Open Chemistry
|
2009
|
vol. 7
|
issue 4
864-869
EN
The process of obtaining semiconductive and electrical conductive layers of copper sulfides by the sorption - diffusion method on polymers (polyamide 6 and low density polyethylene) using solutions of potassium pentathionate, K2S5O6, and higher polythionic acids, H2Sn O6 (n = 21, 33), was investigated. The layers were characterized for compositional and electrical properties by X-ray diffraction (XRD) analysis and sheet resistance measurements. The thickness of copper sulfides layers on polyamide and polyethylene increased with increasing time of polymer sulfurization and varied from 10 to 43 µm. The variations of the sheet resistance of copper sulfides layers formed on the surface of polymers on sulfurization agent used, the conditions of sulfurization, chemical and phase composition of the obtained layers were established. Sheet resistance of copper sulfides layers decreases with increasing time of the duration of sulfurization and the number of sulfur atoms in the polythionate anion. The sheet resistance values for copper sulfide layers formed on the polyamide surface are much lower than those of Cux S formed on the polyethylene surface. XRD showed the predomination of Cux S phases with low x values. [...]
5
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Comparison characterization of copper selenide thin layers prepared on polyamide 6 films by sorption-diffusion method

81%
Ivanauskas R., Janickis V., Jasulaitienė V.
Open Chemistry
|
2013
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vol. 11
|
issue 4
636-643
EN
Some earlier synthesized copper selenide (Cux Se) layers formed on the surface of polyamide 6 by sorption-diffusion method using potassium selenotrithionate (K2SeS2O6) as precursor of selenium were characterized by the XRD, XPS and SEM methods. According to the results of the SEM studies, the most uniform Cux Se layers form at the 2.5 h polyamide seleniumized duration at the temperature of 60°C. The thickness of layers, which dependeds on the duration of seleniumization, changed in the range of 0.8–3.2 µm. The XRD patterns of not previously studied Cux Se layers showed their phase composition of six copper selenides: Cu2Se, two phases of CuSe2, Cu3Se2, berzellianite, Cu2-x Se, and bellidoite Cu2Se. Analysis of the XRD and XPS data shows that the macrostructure and composition of the CuxSe layers depend on the conditions of formation of these layers. [...]
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