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Deep Level Studies in Zn_{1-x}Mg_{x}Se Layers Grown by MBE

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Płachetko S., Ząbik G., Łukasiak Z., Borowski P., Bała W.

Acta Physica Polonica A

1998

vol. 94

issue 3

483-486

The deep levels present in semiconducting Zn_{1-x}Mg_{x}Se (0 ≤ x ≤ 0.4) were investigated by means of deep level transient spectroscopy, photocapacitance transient and thermally stimulated depolarization. The thermal activation energy levels estimated from the deep level transient spectroscopy measurements are: E_{T1}=0.28 eV and E_{T2}=0.56 eV. For the Zn_{1-x}Mg_{x}Se epilayers thermally stimulated depolarization curves consist of four overlapping peaks: 227.4 K, 243.6 K, 265.7 K, and 285.0 K.

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1 Acta Physica Polonica A

1 1998

1 Bała W.

1 Borowski P.

1 Płachetko S.

1 Ząbik G.

1 Łukasiak Z.

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Deep Level Studies in Zn_{1-x}Mg_{x}Se Layers Grown by MBE