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Polarity Related Problems in Growth of GaN Homoepitaxial Layers

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Leszczyński M., Prystawko P., Śliwinski A., Suski T., Litwin-Staszewska E., Porowski S., Paszkiewicz R., Tłaczała M., Beaumont B., Gibart P., Barski A., Langer R., Knap W., Frayssinet E.

Acta Physica Polonica A

1998

vol. 94

issue 3

427-430

Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.

Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to~15~K

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Laurent T., Sharma R., Torres J., Nouvel P., Blin S., Palermo C., Varani L., Cordier Y., Chmielowska M., Faurie, J., Beaumont B.

Acta Physica Polonica A

2011

vol. 119

issue 2

196-198

We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 μs to 400 ns is found to be significant at room temperature whilst this behavior is inverted or even removed at 77 and 15 K temperatures.

Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

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Laurent T., Sharma R., Torres J., Nouvel P., Blin S., Chusseau L., Palermo C., Varani L., Cordier Y., Chmielowska M., Faurie J., Beaumont B., Shiktorov P., Starikov E., Gruzinskis V.

Acta Physica Polonica A

2011

vol. 119

issue 2

107-110

We report transmission measurements of GaN quantum well grown on sapphire substrate in the 220-325 GHz frequency band at low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found.

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3 Acta Physica Polonica A

2 2011

1 1998

3 Beaumont B.

2 Blin S.

2 Chmielowska M.

2 Cordier Y.

2 Laurent T.

2 Nouvel P.

2 Palermo C.

2 Sharma R.

2 Torres J.

2 Varani L.

1 Barski A.

1 Chusseau L.

1 Faurie J.

1 Faurie, J.

1 Frayssinet E.

1 Gibart P.

1 Gruzinskis V.

1 Knap W.

1 Langer R.

1 Leszczyński M.

1 Litwin-Staszewska E.

1 Paszkiewicz R.

1 Porowski S.

1 Prystawko P.

1 Shiktorov P.

1 Starikov E.

1 Suski T.

1 Tłaczała M.

1 Śliwinski A.

Search results

Polarity Related Problems in Growth of GaN Homoepitaxial Layers

Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to~15~K

Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells