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Pressure Induced Shallow-Deep A_{1} Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment

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Dmochowski J., Stradling R., Sly J., Dunstan D., Prins A., Adams A.

Acta Physica Polonica A

1995

vol. 87

issue 2

457-460

Variable-pressure Dunstan-type diamond anvil high pressure cell and a low temperature photoluminescence technique are used to observe the shallow-deep A_{1} transition for Sn donors in highly Sn doped n-type (≈ 10^{18} cm^{-3}) GaAs. Fermi level pinning to the position of the deep Sn donor state entering the gap close to 30 kbar pressure is observed. Drastic narrowing of the near-band-edge luminescence is observed in the transition region. The deep-donor pressure coefficient of 2 meV/kbar with respect to the valence band is deduced from the energy position of the deep donor-acceptor transitions.

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1 Acta Physica Polonica A

1 1995

1 Adams A.

1 Dmochowski J.

1 Dunstan D.

1 Prins A.

1 Sly J.

1 Stradling R.

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Pressure Induced Shallow-Deep A_{1} Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment