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EN
Model of hopping excitons is applied to study the carrier dynamics in GaInNAs/GaAs quantum well system. Impact of parameters describing localizing states (i.e., an average energy and density) on carrier dynamics in GaInNAs material is investigated theoretically. It is shown how those parameters affect the quantities that can be extracted from time resolved photoluminescence experiments. It is shown that obtained simulations can be very helpful in the interpretation of the experimental data.
EN
Carrier dynamics and dynamic band-bending in self-assembled ZnTe/ZnSe quantum dots have been studied by means of time-resolved photoluminescence experiment at low temperatures. The experiment reveals clearly type-II character of the confinement potential in the dot manifested in: (i) long photoluminescence decay time constant of 28-35 ns, and (ii) temporal shift of the quantum dot peak emission towards low energy following the laser pulse excitation. The magnitude of the spectral shift Δ E depends on the dot size and the power density of excitation pulse. For the dots under study and given experimental conditions Δ E ≈ 28 ÷ 42 meV.
EN
Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga_{0.80}In_{0.20}As_{0.15}Sb_{0.85}/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 μ m). A time-resolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3±0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240±10 ps time constant.
EN
The static and dynamic properties of excitons and trions in a 80 nm wide Cd_{1-x}Mn_xTe/Cd_{0.7}Mg_{0.3}Te quantum well with extremely small Mn content (x=0.00027) have been studied by means of time-integrated and time-resolved photoluminescence experiment at low and elevated temperatures. The trion binding energy has been estimated to be 2.6 ± 0.8 meV. The exciton and trion lifetimes have been measured to be ≈ 150 ps, and ≈ 200 ps, respectively. The temperature dependence of both lifetimes together with the multicomponent character of the PL decay process suggest a spatial localization of excitons and trions in the investigated quantum well.
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