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Structural and Optical Properties of ZnO Nanowires Doped with Magnesium

100%

Zhuang H., Wang J., Liu H., Li J., Xu P.

Acta Physica Polonica A

2011

vol. 119

issue 6

819-823

ZnO nanowires doped with Mg have been successfully prepared on Au-coated Si (111) substrates using chemical vapor deposition method with a mixture of ZnO, Mg, and activated carbon powders as reactants at 850°C. The structural, compositional, morphological and optical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectroscopy. The nanowires are single crystalline in nature and preferentially grow up along [0001] direction with the average diameter and length of about 60 nm and several hundred micrometers, respectively, thinner and longer than the results of literature using the similar method. Room temperature photoluminescence spectroscopy shows a blueshift from the bulk band gap emission, which can be attributed to Mg doping that were detected by energy dispersive X-ray analysis EDX in the nanowires. Finally, the possible growth mechanism of crystalline ZnO nanowires is discussed briefly.

Fabrication of High-Density GaN Nanowires through Ammoniating Ga_2O_3/Nb Films

86%

Zhuang H., Li B., Zhang S., Zhang X., Xue C., Wang D., Shen J.

Acta Physica Polonica A

2008

vol. 113

issue 2

723-730

High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating Ga_2O_3/Nb films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.

Growth of β-Ga_2O_3 Nanorods and Photoluminescence Properties

86%

Zhang, S., Zhuang H., Xue C., Li B., Shen J., Wang D.

Acta Physica Polonica A

2007

vol. 112

issue 6

1195-1201

β-Ga_2O_3 nanorods were successfully fabricated through annealing Ga_2O_3/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline Ga_2O_3 with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-Ga_2O_3 single crystal. The growth process of the β-Ga_2O_3 nanorods is probably dominated by conventional vapor-solid mechanism.

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3 Acta Physica Polonica A

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3 Zhuang H.

2 Li B.

2 Shen J.

2 Wang D.

2 Xue C.

1 Li J.

1 Liu H.

1 Wang J.

1 Xu P.

1 Zhang S.

1 Zhang X.

1 Zhang, S.

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Structural and Optical Properties of ZnO Nanowires Doped with Magnesium

Fabrication of High-Density GaN Nanowires through Ammoniating Ga_2O_3/Nb Films

Growth of β-Ga_2O_3 Nanorods and Photoluminescence Properties