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Dye Aggregation Influence on Dye Sensitized Solar Cell Performance in Nanocoral ZnO-Based Thin Film Cells Sensitized with N-719 and Rose Bengal Dyes

100%
Borysiewicz M., Chusnutdinow S., Wzorek M., Wojciechowski T.
Acta Physica Polonica A
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2016
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vol. 130
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issue 5
1187-1189
EN
Dye sensitized solar cells were fabricated using ZnO nanostructured photoelectrodes sensitized with N-719 or Rose Bengal dyes. We assessed the device performance as a function of the sensitization time and found a dependence on time for the N-719 and no significant changes for the Rose Bengal. Furthermore, we observe that the structure of the N-719 molecule beneficial for sensitization of TiO₂ may lead to the degradation of the ZnO crystals and a growth of an amorphous shell limiting dye performance in the cells.
2
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Electrical Properties of p-ZnTe/n-CdTe Photodiodes

100%
Chusnutdinow S., Makhniy V., Wojtowicz T., Karczewski G.
Acta Physica Polonica A
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2012
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vol. 122
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issue 6
1077-1079
EN
Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of photovoltaic, thinfilm p-ZnTe/n-CdTe heterojunctions have been studied in the temperature range of 280-400 K. The p-n junctions were grown by MBE on (100) semi-insulating GaAs substrates. From the analysis of I-V and C-V curves the potential barrier height of the junctions and its temperature dependence are determined. The relatively large value of the temperature coefficient of the potential barrier height (2.5-3.0 × 10^{-3} eV/K) indicates a high density of defects at the p-ZnTe/n-CdTe interface. The presence of interface defects limits the efficiency of the solar energy conversion of these devices.
3
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The Effect of Surface Preparation on Physical Properties of Ni-ZnSe Junctions

88%
Chusnutdinow S., Makhniy V., Aleszkiewicz M., Zaleszczyk W., Slotov M.
Acta Physica Polonica A
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2014
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vol. 126
|
issue 5
1076-1078
EN
We report on optical and photovoltaic properties of Ni-ZnSe junctions. We demonstrate that the preparation method of the ZnSe surface determines luminescence, optical transmission of ZnSe substrates and photovoltaic spectra of the Ni-ZnSe junctions. The observed effects are explained by formation of low-dimensional quantum structures on the ZnSe surface in result of the surface preparation procedure. This is confirmed by atomic force microscopy studies, which show the presence of grains with lateral dimensions of 30-300 nm on ZnSe surface. The smallest grains are responsible for a wide spectral band observed in photoluminescence at 3.4 eV, i.e., at much higher energies than the energy gap of bulk ZnSe, E_{g} ≈ 2.7 eV.
4
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High-Resolution X-Ray Diffraction Studies on MBE-Grown p-ZnTe/n-CdTe Heterojunctions for Solar Cell Applications

88%
Wichrowska K., Domagala J., Wosinski T., Chusnutdinow S., Karczewski G.
|
EN
High-resolution X-ray diffractometer was used to study structural quality, lattice parameters and misfit strain in p-ZnTe/n-CdTe heterojunctions grown by the molecular-beam epitaxy technique on two different (001)-oriented substrates of GaAs and CdTe. The X-ray diffractometer results indicate that the CdTe layers, grown on lattice mismatched GaAs substrate, are partially relaxed, by the formation of misfit dislocations at the interface, and display residual vertical strain of the order of 10^{-4}. The presence of threading dislocations in the layers effectively limits the efficiency of solar energy conversion in the investigated heterojunctions. Homoepitaxially grown CdTe layers, of much better structural quality, display unexpected compressive strain in the layers and the relaxed lattice parameter larger than that of the substrate. Possible reasons for the formation of that unusual strain are discussed.
5
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Reduction of the Optical Losses in CdTe/ZnTe Thin-Film Solar Cells

64%
Chusnutdinow S., Pietruszka R., Zaleszczyk W., Makhniy V., Wiater M., Kolkovsky V., Wojtowicz T., Karczewski G.
Acta Physica Polonica A
|
2014
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vol. 126
|
issue 5
1072-1075
EN
We report on reduction of optical losses in n-CdTe/p-ZnTe thin-film solar cells grown by molecular beam epitaxy. The investigated thin-film devices were grown from elemental sources on monocrystalline, semi-insulating, (100)-oriented GaAs substrates. The optical losses have been reduced by a texturing of the device surface and by depositing of a ZnO antireflection coating. Current-voltage and spectral characteristics of the investigated p-ZnTe/n-CdTe solar cells depend significantly on the preparation of the surface of the ZnTe window. We describe a procedure of chemical etching of the ZnTe window leading to surface texturing. A ZnO layer of proper thickness deposited by low-temperature atomic layer deposition technique on the ZnTe surface forms an effective antireflection coating that leads to the reduction of optical losses. Due to reduction of the optical losses we observe increase of the short-circuit current, J_{SC}, by almost 60% and of the energy conversion efficiency by 44%.
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