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Growth and Electrical Properties of Phosphorus Doped Zn_{1-x}Mn_{x}Te Crystals

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Khoi L. V., Jaroszyński J., Witkowska B., Mycielski A., Gałązka R. R., Cisowski J.

Acta Physica Polonica A

1997

vol. 92

issue 4

833-836

The high pressure Bridgman technique was used to grow Zn_{1-x}Mn_{x}Te:P crystals. Under the N_{2} pressure of 30 atm., we obtained the p^{+}-Zn_{1-x}Mn_{x}Te single crystals 8-10 mm in diameter, with free-carrier densities as high as p ≈ 8×10^{18} cm^{-3} and the room temperature conductivity σ(RT) ≈ 30 Ω^{-1}cm^{-1}. Magnetoresistance measurements were carried out down to 1.3 K and up to 6 T. In Zn_{1-x}Mn_{x}Te:P a strong increase in the acceptor binding energy as well as an immense (ρ(0,1.3K)/ρ(6T,1.3K) > 10^{3}) negative magnetoresistance are observed, by contrast, not seen in diamagnetic ZnTe:P. It is shown that these effects come from the formation of bound magnetic polarons and their destruction by an external magnetic field.

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1 Acta Physica Polonica A

1 1997

1 Cisowski J.

1 Gałązka R. R.

1 Jaroszyński J.

1 Khoi L. V.

1 Mycielski A.

1 Witkowska B.

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Growth and Electrical Properties of Phosphorus Doped Zn_{1-x}Mn_{x}Te Crystals