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Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction

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Kreshchuk A., Novikov S., Savel'ev I., Polyanskaya T., Pődör B., Reményi G., Kovács G.

Acta Physica Polonica A

1998

vol. 94

issue 3

415-420

The energy relaxation in two-dimensional electron gas in In_{0.53}Ga_{0.47}As/InP has been studied in a wide range of electron temperatures (from 0.1 to 10 K). The energy loss rate of electrons is controlled by the interaction of electrons with the piezoelectric potential of acoustic phonons. The value of the piezoelectric constant for InGaAs lattice-matched to InP is deduced from theoretical fits of the experimental data: h_{14}=(1.1±0.1)×10^{7} V/cm. Available data for the piezoelectric constant of In_{x}Ga_{1-x}As are discussed in the light of the results of this work.

Activated Transport in Magnetic-Field Induced Insulating Phase in Two-Dimensional Electron Gas in InGaAs/InP Heterostructures

100%

Pődör B., Gombos G., Reményi G., Kovács G., Savel'ev I. G., Novikov S. V.

Acta Physica Polonica A

1997

vol. 92

issue 5

945-949

We report on experiments on low temperature (millikelvin range) activated magnetotransport on low-density two-dimensional electron systems in InGaAs/InP for Landau level filling factors 0.25 ≤ ν ≤ 0.55. The activation energy increases approximately linearly with decreasing filling factor. The observations are discussed in the light of the formation of the Wigner solid.

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2 Acta Physica Polonica A

1 1998

1 1997

2 Kovács G.

2 Pődör B.

2 Reményi G.

1 Gombos G.

1 Kreshchuk A.

1 Novikov S.

1 Novikov S. V.

1 Polyanskaya T.

1 Savel'ev I.

1 Savel'ev I. G.

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Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction

Activated Transport in Magnetic-Field Induced Insulating Phase in Two-Dimensional Electron Gas in InGaAs/InP Heterostructures