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Terahertz Generation and Detection by Plasma Waves in Nanometer Gate High Electron Mobility Transistors

100%

Knap W., Łusakowski J., Teppe F., Dyakonova N., Meziani Y.

Acta Physica Polonica A

2005

vol. 107

issue 1

82-91

The high electron mobility transistors can act as a resonator cavity for the plasma waves that can reach THz frequencies for a nanometer size devices. As was predicted by Dyakonov and Shur in 1993, the steady state of the current flow in a gated 2D electron gas can become unstable leading to the emission of an electromagnetic radiation at the plasma wave frequencies. The theory predicted also that the plasma waves can be used for resonant detection of THz electromagnetic radiation. In the present paper we review our recent experiments on THz emission and detection performed on high electron mobility transistors based on different semiconductor structures: InGaAs/GaAlAs, GaAs/GaAlAs, and Si.

THz Emission Related to Hot Plasmons and Plasma Wave Instability in Field Effect Transistors

59%

Dyakonova N., El Fatimy A., Meziani Y., Coquillat D., Knap W., Teppe F., Buzatu P., Diforte-Poisson M., Dua C., Piotrowicz S., Morvan E., Delage S.

Acta Physica Polonica A

2011

vol. 120

issue 5

924-926

The current flowing in two-dimensional channel of field effect transistors can generate different types of charge density perturbations. They can have a form of uncorrelated hot plasmons or plasma waves. The mechanism of plasma wave generation depends on the parameter ωt and on boundary conditions of the channel. At ωt ≪ 1 only hot plasmons can be generated. The THz emission due to radiative decay of hot plasmons has a broad spectrum and can be only poorly controlled by the transistor gate. The tunability of THz emission can be obtained in the case of the Dyakonov-Shur plasma wave instability. In this work we present experimental studies of THz emission in InGaP/InGaAs/GaAs and GaN/AlGaN based field effect transistors. We report on two types of emission onset: (i) a smooth one typical for hot plasmons generation and (ii) threshold-like one characteristic for plasma waves instabilities. The tunability and spectra of emission change depending on the transistor configuration. We discuss the results suggesting several possible mechanisms of plasma wave excitation.

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2 Acta Physica Polonica A

1 2011

1 2005

2 Dyakonova N.

2 Knap W.

2 Meziani Y.

2 Teppe F.

1 Buzatu P.

1 Coquillat D.

1 Delage S.

1 Diforte-Poisson M.

1 Dua C.

1 El Fatimy A.

1 Morvan E.

1 Piotrowicz S.

1 Łusakowski J.

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Terahertz Generation and Detection by Plasma Waves in Nanometer Gate High Electron Mobility Transistors

THz Emission Related to Hot Plasmons and Plasma Wave Instability in Field Effect Transistors