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1
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Application of DC Magnetron Sputtering for Creation of Gas-Sensitive Indium Oxide Thin Films and Their Properties

100%
Luhin V., Zharsky I., Zhukowski P.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
837-839
EN
In this paper the technology of gas sensitive semiconductor structures based on indium oxide thin films by DC magnetron sputtering of indium with the subsequent thermal oxidation is developed. Structure, surface morphology and chemical composition of the obtained films have been investigated by electron diffraction, scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. Conditions of In_2O_3 films formation with high selectivity and sensitivity to NO_2, and NH_3 are established.
2
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Influence of Xe^{+} Irradiation on Topography and Wettability of Graphite Surface

100%
Tashlykov I., Turavets A., Zhukowski P.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
115-117
EN
The investigation of influence of Xe^{+} ions irradiation of graphite on its surface topography and wettability was conducted. With the increase of the irradiation dose, the roughness average increases rapidly at first (when the sample was irradiated at the dose of 1 × 10^{14} cm^{-2}) and then decreases slowly. The atomic force microscopy three-dimensional pictures showed that after irradiation of graphite of Xe^{+} ions with a dose of 3 × 10^{15} cm^{-2} hemispherical grains (from 0.2 to 0.8 μm in diameter) appear on its surface. Surface water contact angle measurement showed that irradiation of graphite by Xe^{+} ions leads to a hydrophobic surface of graphite. We have observed that irradiation of graphite by Xe^{+} ions can be used for obtaining graphite surface with desirable topography and water wettability.
3
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Hopping Conductance in Nanocomposites (Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x} Manufactured by Ion-Beam Sputtering of Complex Target in Ar+O_2 Ambient Gas

88%
Kołtunowicz T., Zhukowski P., Fedotova V., Saad A., Fedotov A.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
39-42
EN
We report the investigation of a real part of the admittance σ of granular nanocomposites (Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x} with 0.30 < x < 0.70 in the dielectric (hopping) regime. An analysis of the σ(T, f, x) dependences in the as-deposited and annealed films over the temperature 77 K < T < 300 K and frequency 50 < f < 10^6 Hz ranges displayed the predominance of an activation (hopping) conductance mechanism with dσ/ dT > 0 for the samples below the percolation threshold x_{C} ≈ 0.76 ± 0.05. Based on the earlier models for hopping AC conductance, computer simulation of the frequency coefficient α_{f} of hopping conductance depending on the probability of jump p, frequency f, and also on the shape of σ(f) curve was performed. The experimental and simulation results revealed a good agreement.
4
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Annealing of (CoFeZr)_{x}(CaF_2)_{100-x} Nanocomposites Produced by the Ion-Beam Sputtering in the Ar and O_2 Ambient

88%
Kołtunowicz T., Zhukowski P., Bondariev V., Fedotova J., Fedotov A.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
932-934
EN
This paper presents the investigations of electrical properties and effect of annealing on conductivity of (CoFeZr)_{x}(CaF_2)_{100-x} nanocomposites produced by ion-beam sputtering in the Ar and O_2 ambient. Investigations into conductivity of (CoFeZr)_{x}(CaF_2)_{100-x} nanocomposites depending on the measuring temperature and the annealing temperature have been performed. The application of a combined argon-oxygen beam brings about lowering of the potential barrier on the surface of nanoparticles. In the course of annealing the additional oxidation occurs. First it proceeds on the surface and then all through the metallic-phase particles.
5
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The Features of Real Part of Admittance in the Nanocomposites (Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x} Manufactured by the Ion-Beam Sputtering Technique with Ar Ions

76%
Kołtunowicz T., Zhukowski P., Fedotova V., Saad A., Larkin A., Fedotov A.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
35-38
EN
The temperature and frequency dependences of the admittance real part σ (T, f) in granular (Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x} nanocomposite films around the percolation threshold x_{C} were investigated. The behaviour of σ (T, f) vs. the temperature and frequency over the ranges 77-300 K and 50 Hz-1 MHz, respectively, displays the predominance of an activation (hopping) conductance mechanism for the samples below the percolation threshold x_{C} and of a metallic one beyond the x_{C} determined as 54 ± 2 at.%. The mean hopping range d for the nanoparticles diameter D was estimated at different metallic phase content x.
6
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Formation of Noncoil-Like Inductance in Nanocomposites (Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x} Manufactured by Ion-Beam Sputtering of Complex Targets in Ar+O_2 Atmosphere

76%
Zhukowski P., Kołtunowicz T., Węgierek P., Fedotova J., Fedotov A., Larkin A.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
43-45
EN
This paper investigates the inductive contribution to AC conductance in the granular nanocomposites (Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}. The initial nanocomposites studied were manufactured in Ar+O_2 atmosphere by ion-beam sputtering of the target containing Fe_{0.45}Co_{0.45}Zr_{0.10} and alumina stripes and then subjected to the annealing procedure in air over the temperature range 373 K < T_{a} < 873 K. These samples, before and after annealing, were studied using the temperature 77 K < T_{p} < 300 K and frequency 50 Hz < f < 1 MHz dependences of a real part of the admittance σ(T, f). Analysis of the observed σ (f, T_{p}) dependences for x < 0.5 demonstrated that in the studied samples the equivalent circuits with the capacitive and noncoil-like inductive contributions can be accomplished. Just in this case, the capacitive properties of RLC circuit with the phase angle - 90° ≤ θ_{L} < 0° are exhibited at low frequencies and the inductive properties with 0° ≤ θ_{H} < 90° become apparent at high frequencies. A value of the critical frequency f_{R}, where θ_{H} changes sign, depends on the metallic phase concentration x, measuring temperature T_{p}, and annealing temperature T_{a}.
7
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Electrochemically Deposited Cobalt Nanoarrays in SiO_2/n-Si Templates Produced by Swift Heavy Ion-Induced Modification Technology

76%
Koltunowicz T., Zhukowski P., Fedotova J., Bayev V., Streltsov E., Baran L.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
929-931
EN
Nanoarrays of Co nanorods were formed by means of electrochemical deposition in the nanoporous SiO_2/n-Si templates. Structure and magnetic properties at room temperatures were studied by means of atomic force and scanning electron microscopies, vibrating sample magnetometry. The presence of perpendicular magnetic anisotropy component at room temperature makes Co nanorods in the nanoporous SiO_2/n-Si templates promising for nanoelectronic devices and biomedical applications.
8
Content available remote

EPR Investigations of Electrons and Neutrons Irradiated Cubic Boron Nitride

76%
Azarko I., Ignatenko O., Karpovich I., Odzhaev V., Kozlova E., Zhukowski P.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
923-925
EN
Microcrystals of cubic boron nitride powders synthesised under different conditions and further irradiated with neutrons and electrons have been investigated. It was found that some changes of the samples' paramagnetic properties depend on the electron irradiation dose. It was also shown that the initial boron type defects growth occurs under thermal neutron, as well as under fast neutrons irradiation. The nitrogen-containing defects concentration changes in a threshold manner.
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