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Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping

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Gronin S., Sorokin S., Sedova I., Kop'ev P., Ivanov S., Zverev M., Gamov N., Peregoudov D., Studionov V.

Acta Physica Polonica A

2008

vol. 114

issue 5

1115-1122

The characteristics of ZnSe-based electron beam pumped semiconductor lasers are presented in detail. The laser structures consist of a 0.6 μm thick superlattice waveguide centered with ten equidistantly placed CdSe/ZnSe quantum dot active layers. The maximum light output pulse power of 12 W per facet at room temperature along with an extremely high quantum efficiency of ≈8.5% were obtained at an electron beam pumping energy of 23 keV (the laser wavelength is of 542 nm). The calculations of a spatial distribution of non-equilibrium carrier concentration within the semiconductor structures under electron beam pumping are presented. The possible ways of further improvement of laser efficiency are discussed.

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1 Acta Physica Polonica A

1 2008

1 Gamov N.

1 Gronin S.

1 Ivanov S.

1 Kop'ev P.

1 Peregoudov D.

1 Sedova I.

1 Sorokin S.

1 Studionov V.

1 Zverev M.

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Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping