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Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures

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Grigelionis I., Fobelets K., Vincent B., Mitard J., De Jaeger B., Simoen E., Hoffman T., Yavorskiy D., Łusakowski J.

Acta Physica Polonica A

2011

vol. 120

issue 5

933-935

We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization (V_{G}). Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to V_{G}. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic μ(V_{G}) dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.

Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells

81%

Seliuta D., Čechavičius B., Kavaliauskas J., Krivaitė G., Grigelionis I., Balakauskas S., Valušis G., Sherliker B., Halsall M., Lachab M., Khanna S., Harrison P., Linfield E.

Acta Physica Polonica A

2008

vol. 113

issue 3

909-912

The authors demonstrate selective detection of terahertz radiation employing berylliumδ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.

Terahertz Response of a Point Contact Based on CdTe/CdMgTe Quantum Well in Magnetic Field

81%

Grigelionis I., Białek M., Grynberg M., Czapkiewicz M., Kolkovskiy V., Wiater M., Wojciechowski T., Wróbel J., Wojtowicz T., But D., Knap W., Łusakowski J.

Acta Physica Polonica A

2012

vol. 122

issue 6

1069-1072

A photoresponse at THz frequencies of a quantum point contact fabricated on a CdTe/CdMgTe quantum well was studied at low temperatures as a function of magnetic field. The spectra show a structure which was interpreted as resulting from the cyclotron resonance and magnetoplasmon excitations. The wavelength of the fundamental magnetoplasmon mode was found to be about 2 μm which coincides with one of dimensions of the point contact. We also discuss the possibility of coupling of magnetoplasmon modes to shallow impurity transitions in the quantum well.

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3 Acta Physica Polonica A

1 2012

1 2011

1 2008

3 Grigelionis I.

2 Łusakowski J.

1 Balakauskas S.

1 Białek M.

1 But D.

1 Czapkiewicz M.

1 De Jaeger B.

1 Fobelets K.

1 Grynberg M.

1 Halsall M.

1 Harrison P.

1 Hoffman T.

1 Kavaliauskas J.

1 Khanna S.

1 Knap W.

1 Kolkovskiy V.

1 Krivaitė G.

1 Lachab M.

1 Linfield E.

1 Mitard J.

1 Seliuta D.

1 Sherliker B.

1 Simoen E.

1 Valušis G.

1 Vincent B.

1 Wiater M.

1 Wojciechowski T.

1 Wojtowicz T.

1 Wróbel J.

1 Yavorskiy D.

1 Čechavičius B.

Search results

Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures

Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells

Terahertz Response of a Point Contact Based on CdTe/CdMgTe Quantum Well in Magnetic Field