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Contribution of Mn 3d Electrons To the Valence Band of Sn_{0.9}Mn_{0.1}te

100%

Nadolny A., Guziewicz E., Kowalski B., Orłowski B., Johnson R.

Acta Physica Polonica A

1998

vol. 94

issue 3

454-458

The synchrotron radiation in the energy range between 15 and 70 eV was used to investigate the electronic structure of the crystalline Sn_{0.9}Mn_{0.1}Te by means of the resonant photoemission spectroscopy. Fano-type resonance has been observed in the obtained constant initial energy curves with the resonant energy 50.6 eV and antiresonant energy 49.0 eV. The energy distribution curves taken at photon energies close to the Mn 3p-3d transitions allow us to conclude that Mn atoms contribute to the valence band mainly at energies of 4.0 eV and 7.8 eV below the valence band edge.

Electrical, Magnetic, and Structural Properties of Sn_{1-x}Mn_{x}Te Layers Grown by Molecular Beam Epitaxy

73%

Nadolny A., Sadowski J., Story T., Dobrowolski W., Arciszewska M., Świątek K., Kachniarz J., Adamczewska J.

Acta Physica Polonica A

1998

vol. 94

issue 3

449-453

Layers of Sn_{1-x}Mn_{x}Te (x ≤ 0.1) with thickness 0.2-2 μm were grown by molecular beam epitaxy on BaF_{2} substrates with a 0.01-1 μm thick SnTe buffer layer. Both SnTe and Sn_{1-x}Mn_{x}Te layers show metallic p-type conductivity with conducting hole concentrations (at T=77 K) p_{77}=7×10^{19} -2×10^{21} cm^{-3}. The layers grown under the conditions of an extra Te flux have a high carrier concentration and exhibit ferromagnetic phase transition at T_{C} ≤ 7 K. The layers grown with no (or very low) additional Te flux show low carrier concentrations (below 10^{20} cm^{-3}) and remain paramagnetic in the temperature range studied T=4.5÷70 K.

(Eu,Gd)Te - MBE Growth and Characterization

59%

Dziawa P., Taliashvili B., Domuchowski W., Łusakowska E., Arciszewska M., Demchenko I., Dobrowolski W., Dybko K., Fedorych O., Nadolny A., Osinniy V., Petrouchyk A., Story T.

Acta Physica Polonica A

2004

vol. 106

issue 2

215-221

Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF_2 (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 10^{20}~cm^{-3} and sharp maximum of resistivity at transition temperature.

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3 Acta Physica Polonica A

1 2004

2 1998

3 Nadolny A.

2 Arciszewska M.

2 Dobrowolski W.

2 Story T.

1 Adamczewska J.

1 Demchenko I.

1 Domuchowski W.

1 Dybko K.

1 Dziawa P.

1 Fedorych O.

1 Guziewicz E.

1 Johnson R.

1 Kachniarz J.

1 Kowalski B.

1 Orłowski B.

1 Osinniy V.

1 Petrouchyk A.

1 Sadowski J.

1 Taliashvili B.

1 Łusakowska E.

1 Świątek K.

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Contribution of Mn 3d Electrons To the Valence Band of Sn_{0.9}Mn_{0.1}te

Electrical, Magnetic, and Structural Properties of Sn_{1-x}Mn_{x}Te Layers Grown by Molecular Beam Epitaxy

(Eu,Gd)Te - MBE Growth and Characterization