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Investigation of Localized Electric Field in the Type-II InAs/GaAsSb/GaAs Structure

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Lee S., Kim J., Yoon S., Kim Y., Lee S., Honsberg C.
Acta Physica Polonica A
|
2016
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vol. 130
|
issue 5
1213-1216
EN
The effect of localized electric field (F) was investigated in the type-II InAs/GaAsSb/GaAs structures. To compare type-I to type-II, two types of samples with different Sb contents was grown by molecular beam epitaxy, whose Sb contents are 3% (type-I) and 16% (type-II), respectively. In the both samples, we performed excitation power dependent-photoreflectance at 10 K and the result showed that the period of the Franz-Keldysh oscillation, revealed above the band gap (E_{g}) of GaAs, was broadened in the only type-II system, which means that F was also increased because it is proportional to the period of the Franz-Keldysh oscillation while the period of the Franz-Keldysh oscillations stayed unchanged in type-I system. This phenomenon is explained by that the F was affected by the band bending effect caused by the spatially separated photo-excited carriers in the interface between GaAsSb and GaAs. The F changed linearly as a function of square root of excitation power as expected for the F. Moreover, F was calculated using fast Fourier transform method for a qualitative analysis, which is in a good agreement with the theory of triangular well approximation.
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