Search results

Sort By:

Limit search:

Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs

100%

Buda B., Leifeld O., Völlmeke S., Schmilgus F., As D., Schikora D., Lischka K.

Acta Physica Polonica A

1996

vol. 90

issue 5

997-1001

We investigated the GaAs/ZnSe interface and the influence of the Ga_{2}Se_{3} formation at the GaAs/ZnSe interface on the relaxation of the ZnSe epilayer using reflection high-energy electron diffraction, atomic force microscope, photoluminescence, and X-ray diffraction techniques. An improvement of the surface roughness due to the cleaning of the GaAs substrate with hydrogen excited in a plasma source and a higher critical thickness of GaAs(001)/ZnSe due to the suppression of Ga_{2}Se_{3} at the surface was observed.

Refine search results

1 Acta Physica Polonica A

1 1996

1 As D.

1 Buda B.

1 Leifeld O.

1 Lischka K.

1 Schikora D.

1 Schmilgus F.

1 Völlmeke S.

Search results

Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs