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Modified Bohm’s theory for abstruse measurements: application to layer depth profiling using auger spectroscopy

100%
Rówiński E., Pietruszka M.
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issue 1
2
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Structural and Electrical Properties of Electrodeposited Single Junction of Cuprous (I) Oxide-Copper

100%
Rówiński E., Pławecki M.
Acta Physica Polonica A
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2016
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vol. 130
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issue 4
1141-1143
EN
Cuprous (I) oxide (Cu₂O)-based solar cells were fabricated with the use of the electrodeposition technique at nanometre-scale, and the structural, morphological and electrical properties were investigated. The Cu₂O layers were electrodeposited on crystalline and polycrystalline copper substrates. To complete the Cu₂O/Cu(100) and Cu₂O/Cu interfaces as the solar cells the top electrodes of silver paste were painted on the rear of Cu₂O. The microscopic analysis exhibits uneven surface morphologies of a Cu₂O film with the roughness of 92.5 nm, while the X-ray diffraction analysis reveals that the layers are Cu₂O-type polycrystalline structures with the thickness of 493 nm and the crystallite size of 69.8(6) nm. The theoretical analysis of the current-voltage curve was provided to determine the values of electrical parameters of the most efficient solar cell of Ag/Cu₂O/Cu(100) and clearly indicate presence of two Schottky barriers at interfaces.
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Zinc Oxide/Cuprous(I) Oxide-Based Solar Cells Prepared by Electrodeposition

81%
Pławecki M., Rówiński E., Mieszczak Ł.
Acta Physica Polonica A
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2016
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vol. 130
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issue 4
1144-1146
EN
The aim of this research was to fabricate zinc oxide/cuprous(I) oxide-based heterojunction solar cells with the use of electrodeposition methods, and further to investigate their structures and photovoltaic properties. The ZnO and Cu₂O were used as n- and p-type semiconductors, respectively, to fabricate photovoltaic devices based on Ag/ZnO/Cu₂O/Cu(100) heterojunction structures. The crystallite sizes of ZnO and Cu₂O were determined to be 25.4(3) nm and 69.8(6) nm, respectively. It was pointed out that efficiencies of the solar cells can be gradually adjusted, using different thicknesses of Cu₂O layers, to achieve values as high as 2.7%. The standard diode model and high device performance provide new insights into the issue, outlining guidelines for high-performance solar cells and suggesting that a metal-n-type semiconductor-p-type semiconductor nanostructure-crystal layered, sandwiched-type architecture is a promising platform: to boost the efficiency.
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