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Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime

100%
Buyanov A. V., Holtz P. O., Pozina G., Monemar B., Thordson J., Andersson T. G.
Acta Physica Polonica A
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1997
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vol. 92
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issue 4
727-732
EN
We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry and high resolution X-ray diffractometry techniques. The conductivity transition from free carrier transport in ordered δ-layers (<1 ML) to strongly-localized two-dimensional variable range hopping transport under potential fluctuation disordered conditions (>4 ML) is clearly observed. This observation is in good agreement with the secondary ion mass spectrometry and high resolution X-ray diffractometry data. Results from the intermediate case with 2-3 MLs are also discussed.
2
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Hot Photoluminescence in CdTe/CdMnTe Quantum Well Structures Grown by Molecular Beam Epitaxy

100%
Godlewski M., Wojtowicz T., Karczewski G., Kossut J., Bergman J. P., Holtz P. O., Monemar B.
Acta Physica Polonica A
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1997
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vol. 92
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issue 4
765-768
EN
A step-like emission is observed for CdTe/CdMnTe structures δ-doped with In. The new photoluminescence cannot be explained by neither the Raman process nor by the "ordinary" hot photoluminescence. We propose that magnetic interactions are responsible for the new photoluminescence appearing due to a dramatic increase in a thermalization time of hot excitons.
3
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Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface

100%
Lundström T., Bergman J. P., Holtz P. O., Monemar B., Campman K., Merz J. L., Gossard A. C.
Acta Physica Polonica A
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1997
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vol. 92
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issue 4
824-828
EN
We have theoretically and experimentally investigated the radiative recombination process in an n-type modulation doped GaAs/Al_{0.35}Ga_{0.65}As heterostructure. The dynamical reshaping of the potential profile across the heterojunction, and the decay of the spatially indirect radiative recombination between electrons in the two-dimensional electron gas and photo-created holes, have been numerically simulated for various values of the electric field across the heterojunction. Optical matrix elements were deduced from a self-consistent solution of the coupled Schrodinger and Poisson equations at every discrete point of time. The calculated recombination energies and integrated luminescence intensities were compared with experimental data from time-resolved photoluminescence measurements on an 800 Å wide GaAs/AlGaAs heterostructure.
4
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Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs

100%
Godlewski M., Bergman J. P., Holtz P. O., Monemar B., Bugajski M., Regiński K., Kaniewska M.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
719-722
EN
Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown with­out growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth in­terrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized exci­tons are observed in that case.
5
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Exciton Transfer in Multiple Quantum Well Structures of CdTe/CdMnTe Grown by Molecular Beam Epitaxy

84%
Godlewski M., Surma M., Wilamowski Z., Wojtowicz T., Karczewski G., Kossut J., Holtz P. O., Bergman J. P., Monemar B.
Acta Physica Polonica A
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1997
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vol. 92
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issue 4
761-764
EN
The direct evidence for the efficient transfer of excitons from 4 nm and 6 nm to 10 nm wide CdTe quantum wells is presented based on the results of photoluminescence and photoluminescence excitation investigation. Efficient transfer is observed for quantum wells separated by thick (50 nm) CdMnTe barriers containing 10% or 30% Mn fraction. A new mechanism of the transfer is proposed, which involves long range dynamic magnetic interactions between free/bound excitons and Mn ions in the CdMnTe barrier regions of the structure.
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