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Influence of Phase Transformations on Incipient Plasticity of Si-Nanospheres

100%
Chrobak D., Nowak R.
|
2017
|
vol. 131
|
issue 5
1318-1331
EN
Our finding of the current spike effect highlighted for the first time in 2009 offers an enhanced understanding of the link between nanoscale mechanical deformation and electrical behavior, and ultimately suggests key advances in unique phase-change applications in future electronics. Certainly, crystal imperfections affect the properties of the nanoparticles themselves, e.g., their biocompatibility and biodegradability. The potential role of dislocations having a profound impact on the use of Si nanoparticles was largely overlooked, since plastic deformation of bulk Si is dominated by amorphization and phase transformations. Here we show an effect of bulk → nanoparticle transition (deconfinement) on incipient plasticity of Si-nanovolume. Our results provide a fresh insight into the dilemma concerning dislocation or phase transformation origin of nanoscale plastic deformation of semiconductor nanoobjects.
2
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Nanoscale Deformation of GaAs Affected by Silicon Doping

81%
Majtyka A., Nowak R., Chrobak D.
Acta Physica Polonica A
|
2016
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vol. 130
|
issue 4
1127-1130
EN
Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The performed experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding.
3
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Antibiotic resistance of canine Staphylococcus intermedius group (SIG) - practical implications

81%
Chrobak D., Kizerwetter-Świda M., Rzewuska M., Binek M.
Polish Journal of Veterinary Sciences
|
2011
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issue 2
4
Content available remote

Elastic-Plastic Transition in MBE-Grown GaSb Semiconducting Crystal Examined by Nanoindentation

61%
Majtyka A., Trębala M., Tukiainen A., Chrobak D., Borgieł W., Räisänen J., Nowak R.
Acta Physica Polonica A
|
2016
|
vol. 130
|
issue 4
1131-1133
EN
The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E=83.07± 1.78 GPa), hardness (H=5.19±0.25 GPa) and "true hardness" (H_{T}=5.73±0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σ_{Y}=3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.
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