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Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons

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Gaubas E., Kadys A., Uleckas A., Vaitkus J.
Acta Physica Polonica A
|
2008
|
vol. 113
|
issue 3
829-832
EN
Variations of recombination lifetime, with fluence of the reactor neutrons from 10^{12} to 3×10^{16} n/cm^2, in the magnetic field applied Czochralski grown Si samples are examined by the contactless transient techniques of the microwave probed photoconductivity and dynamic gratings. A nearly linear decrease in lifetime from few microseconds to about 200 ps within the examined range of neutron irradiation fluences was obtained. This dependence persists under relatively low (≤80°C) temperature heat treatments. Also, cross-sectional scans of lifetime depth-profiles were examined, which show rather high homogeneity of lifetime values within wafer thickness.
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